Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks

Synaptic behaviors of a single metal–oxide–metal resistive device

(2011) Sang-Jun Choi et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

(2011) Yukihiro Kaneko et al.   APPLIED PHYSICS LETTERS

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure

(2011) Yukihiro Kaneko et al.   JOURNAL OF APPLIED PHYSICS

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology

(2008) Yoshihisa Kato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS