A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3Heterostructure Formed on a Silicon Substrate

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3Heterostructure Formed on a Silicon Substrate
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 9, Pages 7527-7532
Publisher
Japan Society of Applied Physics
Online
2008-09-19
DOI
10.1143/jjap.47.7527

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.