Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

Published 2019 View Full Article

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Title
Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1370-1373
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-07-30
DOI
10.1109/led.2019.2931826

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