Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3 Ferroelectric Field-Effect Transistors
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Title
Polarization-Dependent Electronic Transport in Graphene/Pb(Zr,Ti)O3
Ferroelectric Field-Effect Transistors
Authors
Keywords
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Journal
Advanced Electronic Materials
Volume 3, Issue 7, Pages 1700020
Publisher
Wiley
Online
2017-05-11
DOI
10.1002/aelm.201700020
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- (2014) M. Humed Yusuf et al. NANO LETTERS
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- (2014) Wenjing Jie et al. Nanoscale
- Ferroelectric tunnel junctions with graphene electrodes
- (2014) H. Lu et al. Nature Communications
- Decoding the Fingerprint of Ferroelectric Loops: Comprehension of the Material Properties and Structures
- (2013) Li Jin et al. JOURNAL OF THE AMERICAN CERAMIC SOCIETY
- Tunable Carrier Type and Density in Graphene/PbZr0.2Ti0.8O3 Hybrid Structures through Ferroelectric Switching
- (2013) Christoph Baeumer et al. NANO LETTERS
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- (2012) Hua Xu et al. Small
- Robust bi-stable memory operation in single-layer graphene ferroelectric memory
- (2011) Emil B. Song et al. APPLIED PHYSICS LETTERS
- Hysteresis of Electronic Transport in Graphene Transistors
- (2010) Haomin Wang et al. ACS Nano
- Graphene Nanoribbon Devices Produced by Oxidative Unzipping of Carbon Nanotubes
- (2010) Alexander Sinitskii et al. ACS Nano
- Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3
- (2010) X. Hong et al. APPLIED PHYSICS LETTERS
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- (2009) X. Hong et al. PHYSICAL REVIEW LETTERS
- Photoelectrical Response in Single-Layer Graphene Transistors
- (2009) Yumeng Shi et al. Small
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