High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

Authors

Keywords

MoS<sub>2</sub>, PVDF-TrFE, Ferroelectric field-effect transistor (FeFET)

Journal

Volume 67, Issue 9, Pages 1499-1503

Publisher

Korean Physical Society

Online

2015-11-18

DOI

10.3938/jkps.67.1499

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