Conductance Quantization in Resistive Random Access Memory

Nanoscale Magnetization Reversal Caused by Electric Field-Induced Ion Migration and Redistribution in Cobalt Ferrite Thin Films

(2015) Xinxin Chen et al.   ACS Nano

Metal-Organic Framework Nanofilm for Mechanically Flexible Information Storage Applications

(2015) Liang Pan et al.   ADVANCED FUNCTIONAL MATERIALS

An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions

(2015) Hongwei Tan et al.   ADVANCED MATERIALS

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

(2015) Guoming Wang et al.   APPLIED PHYSICS LETTERS

Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon

(2015) Xiaoning Zhao et al.   CARBON

Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells

(2015) Stefan Tappertzhofen et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

(2015) Nicolas Onofrio et al.   NATURE MATERIALS

Phase-change memory function of correlated electrons in organic conductors

(2015) H. Oike et al.   PHYSICAL REVIEW B

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

(2015) Meiyun Zhang et al.   Nanoscale Research Letters

Co Nanoparticles Induced Resistive Switching and Magnetism for the Electrochemically Deposited Polypyrrole Composite Films

(2014) Zedong Xu et al.   ACS Applied Materials & Interfaces

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

(2014) Xuezeng Tian et al.   ADVANCED MATERIALS

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

(2014) Stefano Ambrogio et al.   ADVANCED MATERIALS

Ferromagnetic nano-conductive filament formed in Ni/TiO2/Pt resistive-switching memory

(2014) Shintaro Otsuka et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Magnetic field controllable nonvolatile resistive switching effect in silicon device

(2014) Jimin Wang et al.   APPLIED PHYSICS LETTERS

Electric field-induced magnetic switching in Mn:ZnO film

(2014) S. X. Ren et al.   APPLIED PHYSICS LETTERS

Electric field manipulation of nonvolatile magnetization in Au/NiO/Pt heterostructure with resistive switching effect

(2014) Y. Q. Xiong et al.   APPLIED PHYSICS LETTERS

Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure

(2014) Meiyun Zhang et al.   APPLIED PHYSICS LETTERS

An overview of the switching parameter variation of RRAM

(2014) Meiyun Zhang et al.   CHINESE SCIENCE BULLETIN

Ion transport-related resistive switching in film sandwich structures

(2014) Xiao-Jian Zhu et al.   CHINESE SCIENCE BULLETIN

Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching Co/ZnO/Fe structures

(2014) Zhihuan Yang et al.   EPL

Uniformity Improvement in 1T1R RRAM With Gate Voltage Ramp Programming

(2014) Hongtao Liu et al.   IEEE ELECTRON DEVICE LETTERS

Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices

(2014) Xiaojuan Lian et al.   JOURNAL OF APPLIED PHYSICS

A comprehensive analysis on progressive reset transitions in RRAMs

(2014) M A Villena et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon

(2014) Chengqing Hu et al.   NANO LETTERS

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

(2014) Umberto Celano et al.   NANO LETTERS

Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

(2014) W H Xue et al.   NANOTECHNOLOGY

Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

(2014) Zhengzhong Zhang et al.   NANOTECHNOLOGY

Magneto-ionic control of interfacial magnetism

(2014) Uwe Bauer et al.   NATURE MATERIALS

Metal Oxide Resistive Switching: Evolution of the Density of States Across the Metal-Insulator Transition

(2014) A. Mottaghizadeh et al.   PHYSICAL REVIEW LETTERS

Operation methods of resistive random access memory

(2014) GuoMing Wang et al.   Science China-Technological Sciences

Thermoelectric Seebeck effect in oxide-based resistive switching memory

(2014) Ming Wang et al.   Nature Communications

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Review of Nanostructured Resistive Switching Memristor and Its Applications

(2014) S. G. Hu et al.   Nanoscience and Nanotechnology Letters

Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier

(2014) Qiang Li et al.   Scientific Reports

Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices

(2014) D. S. Hong et al.   Scientific Reports

Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

(2014) Jian-Chiun Liou et al.   Nanoscale Research Letters

Phase-change memory

(2013) Omer Zilberberg et al.   ACM COMPUTING SURVEYS

Analog Memristors Based on Thickening/Thinning of Ag Nanofilaments in Amorphous Manganite Thin Films

(2013) Dongqing Liu et al.   ACS Applied Materials & Interfaces

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

(2013) Jie Shang et al.   ADVANCED FUNCTIONAL MATERIALS

Magnetism as a probe of the origin of memristive switching in p-type antiferromagnetic NiO

(2013) X. L. Wang et al.   APPLIED PHYSICS LETTERS

In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

(2013) Jun Sun et al.   APPLIED PHYSICS LETTERS

Electromechanically tuned resistive switching device

(2013) Lijie Li   APPLIED PHYSICS LETTERS

Quantum-size effects in hafnium-oxide resistive switching

(2013) Shibing Long et al.   APPLIED PHYSICS LETTERS

Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

(2013) C. Chen et al.   APPLIED PHYSICS LETTERS

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

(2013) Kai-Liang Zhang et al.   Chinese Physics B

Applications of Multi-Terminal Memristive Devices: A Review

(2013) D. Sacchetto et al.   IEEE Circuits and Systems Magazine

High ON/OFF Ratio and Quantized Conductance in Resistive Switching of ${\rm TiO}_{2}$ on Silicon

(2013) Chengqing Hu et al.   IEEE ELECTRON DEVICE LETTERS

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

(2013) Kuan-Chang Chang et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

(2013) Xavier Saura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Review of Emerging New Solid-State Non-Volatile Memories

(2013) Yoshihisa Fujisaki   JAPANESE JOURNAL OF APPLIED PHYSICS

Interplay between chemical state, electric properties, and ferromagnetism in Fe-doped ZnO films

(2013) G. Chen et al.   JOURNAL OF APPLIED PHYSICS

Nanowire-based resistive switching memories: devices, operation and scaling

(2013) D Ielmini et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Cation-based resistance change memory

(2013) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Basic principles of STT-MRAM cell operation in memory arrays

(2013) A V Khvalkovskiy et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

(2013) S. Privitera et al.   MICROELECTRONIC ENGINEERING

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

(2013) Stephan Menzel et al.   Nanoscale

Conductance quantization in a Ag filament-based polymer resistive memory

(2013) Shuang Gao et al.   NANOTECHNOLOGY

Integration of nanoscale memristor synapses in neuromorphic computing architectures

(2013) Giacomo Indiveri et al.   NANOTECHNOLOGY

Nanobatteries in redox-based resistive switches require extension of memristor theory

(2013) I. Valov et al.   Nature Communications

A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

(2013) Hong Sub Lee et al.   Scientific Reports

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

(2013) Sungho Kim et al.   Scientific Reports

Quantum Conductance in Silicon Oxide Resistive Memory Devices

(2013) A. Mehonic et al.   Scientific Reports

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

Correlative Multimodal Probing of Ionically-Mediated Electromechanical Phenomena in Simple Oxides

(2013) Yunseok Kim et al.   Scientific Reports

TaOx-based resistive switching memories: prospective and challenges

(2013) Amit Prakash et al.   Nanoscale Research Letters

Transport properties of two finite armchair graphene nanoribbons

(2013) Luis Rosales et al.   Nanoscale Research Letters

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO

(2012) Guang Chen et al.   ADVANCED MATERIALS

High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

(2012) Vishal Thakare et al.   APPLIED PHYSICS LETTERS

Mechanism for resistive switching in an oxide-based electrochemical metallization memory

(2012) Shanshan Peng et al.   APPLIED PHYSICS LETTERS

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

(2012) E. Miranda et al.   APPLIED PHYSICS LETTERS

Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching

(2012) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory

(2012) Seol Choi et al.   IEEE ELECTRON DEVICE LETTERS

Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells

(2012) John R. Jameson et al.   IEEE ELECTRON DEVICE LETTERS

Observing “quantized” conductance steps in silver sulfide: Two parallel resistive switching mechanisms

(2012) Jelmer J. T. Wagenaar et al.   JOURNAL OF APPLIED PHYSICS

Analysis and modeling of resistive switching statistics

(2012) Shibing Long et al.   JOURNAL OF APPLIED PHYSICS

Magnetism and electrode dependant resistive switching in Ca-doped ceramic bismuth ferrite

(2012) D. Rubi et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

(2012) Wei Lu et al.   MRS BULLETIN

Metal oxide memories based on thermochemical and valence change mechanisms

(2012) J. Joshua Yang et al.   MRS BULLETIN

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch

(2012) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures

(2012) Xavier Cartoixà et al.   PHYSICAL REVIEW B

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

(2012) Feng PAN et al.   Progress in Natural Science-Materials International

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Ferroelectric memory based on nanostructures

(2012) Xingqiang Liu et al.   Nanoscale Research Letters

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Inherent diode isolation in programmable metallization cell resistive memory elements

(2011) Sarath C. Puthentheradam et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

One-dimensional model of the programming kinetics of conductive-bridge memory cells

(2011) John R. Jameson et al.   APPLIED PHYSICS LETTERS

Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films

(2011) Sieu D. Ha et al.   APPLIED PHYSICS LETTERS

Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

(2011) Kuan-Chang Chang et al.   APPLIED PHYSICS LETTERS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

(2011) Feng Pan et al.   IEEE ELECTRON DEVICE LETTERS

Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices

(2011) Di Fu et al.   IEEE ELECTRON DEVICE LETTERS

Reset Statistics of NiO-Based Resistive Switching Memories

(2011) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

(2011) Wentai Lian et al.   IEEE ELECTRON DEVICE LETTERS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A non-filamentary model for unipolar switching transition metal oxide resistance random access memories

(2011) Kan-Hao Xue et al.   JOURNAL OF APPLIED PHYSICS

Device characterization of correlated electron random access memories

(2011) Christopher R. McWilliams et al.   JOURNAL OF APPLIED PHYSICS

Material and process optimization of correlated electron random access memories

(2011) Jolanta Celinska et al.   JOURNAL OF APPLIED PHYSICS

Spin-transfer torque RAM technology: Review and prospect

(2011) T. Kawahara et al.   MICROELECTRONICS RELIABILITY

Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories

(2011) Wenzhuo Wu et al.   NANO LETTERS

From stochastic single atomic switch to nanoscale resistive memory device

(2011) Attila Geresdi et al.   Nanoscale

Scaling limits of resistive memories

(2011) Victor V Zhirnov et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

(2011) Davide Sacchetto et al.   PROCEEDINGS OF THE IEEE

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor

(2010) Zhi Xu et al.   ACS Nano

Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors

(2010) Jong Yeog Son et al.   ACS Nano

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories

(2010) Laurent Cario et al.   ADVANCED MATERIALS

Nonvolatile resistive switching memory based on amorphous carbon

(2010) F. Zhuge et al.   APPLIED PHYSICS LETTERS

Bipolar Resistive Switching Memory Using Cu Metallic Filament in Ge[sub 0.4]Se[sub 0.6] Solid Electrolyte

(2010) S. Z. Rahaman et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Transition-metal-oxide-based resistance-change memories

(2010) S. F. Karg et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching memory: observations with scanning probe microscopy

(2010) Min Hwan Lee et al.   Nanoscale

Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates

(2010) N A Pertsev et al.   NANOTECHNOLOGY

Memory grows up

(2010) Agostino Pirovano et al.   Nature Nanotechnology

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Creation of a two-dimensional electron gas at an oxide interface on silicon

(2010) J.W. Park et al.   Nature Communications

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Inhomogeneous chemical states in resistance-switching devices with a planar-type Pt/CuO/Pt structure

(2009) R. Yasuhara et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions

(2009) Dmitry Ruzmetov et al.   JOURNAL OF APPLIED PHYSICS

Electroforming, magnetic and resistive switching in MgO-based tunnel junctions

(2009) J M Teixeira et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

(2009) A Sokolov et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Resistive non-volatile memory devices (Invited Paper)

(2009) Rainer Waser   MICROELECTRONIC ENGINEERING

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Prediction of a Switchable Two-Dimensional Electron Gas at Ferroelectric Oxide Interfaces

(2009) Manish K. Niranjan et al.   PHYSICAL REVIEW LETTERS

Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors

(2009) Zhi-Min Liao et al.   Small

Excess-silver-induced bridge formation in a silver sulfide atomic switch

(2008) Zhongchang Wang et al.   APPLIED PHYSICS LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B

Review on thermal energy storage with phase change materials and applications

(2008) Atul Sharma et al.   RENEWABLE & SUSTAINABLE ENERGY REVIEWS