Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

(2013) Jie Shang et al.   ADVANCED FUNCTIONAL MATERIALS

In Situ TEM and Energy Dispersion Spectrometer Analysis of Chemical Composition Change in ZnO Nanowire Resistive Memories

(2013) Yu-Ting Huang et al.   ANALYTICAL CHEMISTRY

Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature

(2013) E. Verrelli et al.   APPLIED PHYSICS LETTERS

In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

(2013) Jun Sun et al.   APPLIED PHYSICS LETTERS

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

(2013) V. Y.-Q. Zhuo et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

(2013) Jian Zhang et al.   APPLIED PHYSICS LETTERS

Intrinsic nanofilamentation in resistive switching

(2013) Xing Wu et al.   JOURNAL OF APPLIED PHYSICS

Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

(2013) Jui-Yuan Chen et al.   NANO LETTERS

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

(2013) Z. Q. Wang et al.   Nanoscale

Multimode Resistive Switching in Single ZnO Nanoisland System

(2013) Jing Qi et al.   Scientific Reports

Resistive Switching in Single Epitaxial ZnO Nanoislands

(2012) Jing Qi et al.   ACS Nano

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Mechanism for resistive switching in an oxide-based electrochemical metallization memory

(2012) Shanshan Peng et al.   APPLIED PHYSICS LETTERS

High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

(2012) Wen-Yuan Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

(2012) Yushi Hu et al.   MICROELECTRONIC ENGINEERING

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

(2012) T. Cabout et al.   THIN SOLID FILMS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

(2012) Chung-Nan Peng et al.   Nanoscale Research Letters

Tunable Low-Field Magnetoresistance in (La0.7Sr0.3MnO3)0.5:(ZnO)0.5 Self-Assembled Vertically Aligned Nanocomposite Thin Films

(2011) Aiping Chen et al.   ADVANCED FUNCTIONAL MATERIALS

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Effects of metal contacts and dopants on the performance of ZnO-based memristive devices

(2011) Julia Qiu et al.   JOURNAL OF APPLIED PHYSICS

Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices

(2011) Hu Young Jeong et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Top electrode-dependent resistance switching behaviors of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate

(2011) Ming Hua Tang et al.   MICROELECTRONIC ENGINEERING

Nonvolatile resistive switching in single crystalline ZnO nanowires

(2011) Yuchao Yang et al.   Nanoscale

Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material

(2011) T. Bertaud et al.   THIN SOLID FILMS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Resistive switching behaviors of ZnO nanorod layers

(2010)   APPLIED PHYSICS LETTERS

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

(2010) H. Y. Peng et al.   APPLIED PHYSICS LETTERS

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

(2010) Seunghyup Lee et al.   JOURNAL OF APPLIED PHYSICS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Switching dynamics in titanium dioxide memristive devices

(2009) Matthew D. Pickett et al.   JOURNAL OF APPLIED PHYSICS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Femtosecond laser deposited zinc oxide film and its optical properties

(2008) Yifa Yang et al.   VACUUM