Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

Transition-metal-oxide-based resistance-change memories

(2010) S. F. Karg et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

High κ for MIM and RRAM applications: Impact of the metallic electrode and oxygen vacancies

(2009) C. Vallée et al.   MICROELECTRONIC ENGINEERING

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

(2009) S. Monaghan et al.   SOLID-STATE ELECTRONICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today