Metal oxide memories based on thermochemical and valence change mechanisms

Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory

(2011) Kyung Min Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

(2011) Min Hwan Lee et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

(2011) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

(2010) J. Joshua Yang et al.   ADVANCED MATERIALS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell

(2010) Seul Ji Song et al.   APPLIED PHYSICS LETTERS

Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

(2010) Min Hwan Lee et al.   APPLIED PHYSICS LETTERS

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

(2010) Inrok Hwang et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

(2010) Wan Shen et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching memory: observations with scanning probe microscopy

(2010) Min Hwan Lee et al.   Nanoscale

Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer

(2010) Sheng-Yu Wang et al.   NANOTECHNOLOGY

Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures

(2010) Kyung Min Kim et al.   NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Model of metallic filament formation and rupture in NiO for unipolar switching

(2010) Hyung Dong Lee et al.   PHYSICAL REVIEW B

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Electronic structure of theTi4O7Magnéli phase

(2009) Leandro Liborio et al.   PHYSICAL REVIEW B

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS

Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

(2008) S. H. Chang et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

(2008) Kwang-Jin Lee et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution

(2008) I. H. Inoue et al.   PHYSICAL REVIEW B

Ab initiostudy of the electronic states induced by oxygen vacancies in rutile and anataseTiO2

(2008) G. Mattioli et al.   PHYSICAL REVIEW B