A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

ReRAM technology; challenges and prospects

(2012) Hiro Akinaga et al.   IEICE Electronics Express

Discovery of superconductivity in KTaO3 by electrostatic carrier doping

(2011) K. Ueno et al.   Nature Nanotechnology

Interfacial chemical states of resistance-switching metal/Pr0.7Ca0.3MnO3 interfaces

(2010) R. Yasuhara et al.   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices

(2009) Z. L. Liao et al.   APPLIED PHYSICS LETTERS

Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes

(2009) Song-Lin Li et al.   JOURNAL OF APPLIED PHYSICS

The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

(2009) Joonmyoung Lee et al.   MICROELECTRONIC ENGINEERING

Relationship between resistive switching characteristics and band diagrams ofTi/Pr1−xCaxMnO3junctions

(2009) S. Asanuma et al.   PHYSICAL REVIEW B

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today