Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

Title
Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures
Authors
Keywords
-
Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 4S, Pages 04CD06
Publisher
IOP Publishing
Online
2013-03-22
DOI
10.7567/jjap.52.04cd06

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search