Operation methods of resistive random access memory

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

(2014) Stefano Ambrogio et al.   ADVANCED MATERIALS

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

(2014)   IEEE ELECTRON DEVICE LETTERS

Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

(2014) Marc Bocquet et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Polymer-Based Resistive Memory Materials and Devices

(2013) Wen-Peng Lin et al.   ADVANCED MATERIALS

Resistance switching in oxides with inhomogeneous conductivity

(2013) Da-Shan Shang et al.   Chinese Physics B

Development of a Semiempirical Compact Model for DC/AC Cell Operation of ${\rm HfO}_{\rm{x}}$-Based ReRAMs

(2013) Jinwoo Noh et al.   IEEE ELECTRON DEVICE LETTERS

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

(2013) Tian-Jian Chu et al.   IEEE ELECTRON DEVICE LETTERS

Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology

(2013) Xiaoyi Yang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

AC ageing characteristics of Co-doped ZnO varistors

(2013) YouPing Tu et al.   Science China-Technological Sciences

A model for Nanosecond Pulsed Dielectric Barrier Discharge (NSDBD) actuator and its investigation on the mechanisms of separation control over an airfoil

(2013) ZhenLi Chen et al.   Science China-Technological Sciences

Theoretical analysis and simulation of thermoelastic deformation of bimorph microbeams

(2013) YuanFang Shang et al.   Science China-Technological Sciences

Research on the control method for voltage-current source hybrid-HVDC system

(2013) ChunYi Guo et al.   Science China-Technological Sciences

A compact neural recording interface based on silicon microelectrode

(2013) JianQiang Han et al.   Science China-Technological Sciences

Single event upset sensitivity of 45 nm FDSOI and SOI FinFET SRAM

(2013) Du Tang et al.   Science China-Technological Sciences

Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

(2012) M. G. Cao et al.   APPLIED PHYSICS LETTERS

Improving the electrical performance of resistive switching memory using doping technology

(2012) Yan Wang et al.   CHINESE SCIENCE BULLETIN

Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress

(2012) Wun-Cheng Luo et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

(2012) Feng PAN et al.   Progress in Natural Science-Materials International

Geometric optimization of electrostatic fields for stable levitation of metallic materials

(2012) Liang Hu et al.   Science China-Technological Sciences

Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Scaffolds for central nervous system tissue engineering

(2012) Jin He et al.   Frontiers of Materials Science

An overview of resistive random access memory devices

(2011) YingTao Li et al.   CHINESE SCIENCE BULLETIN

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

(2011) B. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

(2011) Wentai Lian et al.   IEEE ELECTRON DEVICE LETTERS

Filament diffusion model for simulating reset and retention processes in RRAM

(2011) S. Larentis et al.   MICROELECTRONIC ENGINEERING

Effect of high temperature annealing on the performance of MANOS charge trapping memory

(2011) Lin Jin et al.   Science China-Technological Sciences

Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement

(2011) XiaoNan Yang et al.   Science China-Technological Sciences

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

Site-Selective Deposition of Metal Nanoparticles on Aligned WO3Nanotrees for Super-Hydrophilic Thin Films

(2009) Masachika Shibuya et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Effects of the compliance current on the resistive switching behavior of TiO2 thin films

(2009) X. Cao et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

(2009) Lin Yang et al.   APPLIED PHYSICS LETTERS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells

(2009) T. Menke et al.   JOURNAL OF APPLIED PHYSICS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted

(2008) Qi Liu et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

(2008) M. Yin et al.   IEEE ELECTRON DEVICE LETTERS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

Constant current stress of Ti-doped Ta2O5on nitrided Si

(2008) A Paskaleva et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today