Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory
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Title
Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory
Authors
Keywords
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Journal
ADVANCED MATERIALS
Volume 26, Issue 23, Pages 3885-3892
Publisher
Wiley
Online
2014-03-26
DOI
10.1002/adma.201306250
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- On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices
- (2011) R. Soni et al. JOURNAL OF APPLIED PHYSICS
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- Low current resistive switching in Cu–SiO2 cells
- (2008) C. Schindler et al. APPLIED PHYSICS LETTERS
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- (2008) D. Ielmini et al. APPLIED PHYSICS LETTERS
- Morphological evolution of voids by surface drift diffusion driven by capillary, electromigration, and thermal-stress gradients induced by steady-state heat flow in passivated metallic thin films and flip chip solder joints. I. Theory
- (2008) Tarik Omer Ogurtani et al. JOURNAL OF APPLIED PHYSICS
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