Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

(2012) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

(2012) M. Sowinska et al.   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells

(2012) John R. Jameson et al.   IEEE ELECTRON DEVICE LETTERS

Observing “quantized” conductance steps in silver sulfide: Two parallel resistive switching mechanisms

(2012) Jelmer J. T. Wagenaar et al.   JOURNAL OF APPLIED PHYSICS

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

(2010) In Kyeong Yoo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Electronic and atomic structure of metal-HfO2interfaces

(2010) K. Y. Tse et al.   PHYSICAL REVIEW B

Electronic correlation effects in reduced rutileTiO2within theLDA+Umethod

(2010) Seong-Geon Park et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Interaction and ordering of vacancy defects in NiO

(2008) Sohee Park et al.   PHYSICAL REVIEW B