Mechanism for resistive switching in an oxide-based electrochemical metallization memory
Published 2012 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Mechanism for resistive switching in an oxide-based electrochemical metallization memory
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 7, Pages 072101
Publisher
AIP Publishing
Online
2012-02-14
DOI
10.1063/1.3683523
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Inherent diode isolation in programmable metallization cell resistive memory elements
- (2011) Sarath C. Puthentheradam et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode
- (2011) Seung Hyun Jee et al. APPLIED PHYSICS LETTERS
- In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching
- (2011) Takashi Fujii et al. APPLIED PHYSICS LETTERS
- Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory
- (2011) Xing Wu et al. APPLIED PHYSICS LETTERS
- Electrochemical Metallization Resistive Memory Devices Using $\hbox{ZnS-SiO}_{2}$ as a Solid Electrolyte
- (2011) J. Q. Huang et al. IEEE ELECTRON DEVICE LETTERS
- ZnO Schottky barriers and Ohmic contacts
- (2011) Leonard J. Brillson et al. JOURNAL OF APPLIED PHYSICS
- Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments
- (2011) Fei Zhuge et al. NANOTECHNOLOGY
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Nonvolatile resistive switching memory based on amorphous carbon
- (2010) F. Zhuge et al. APPLIED PHYSICS LETTERS
- Dependence of aluminum-doped zinc oxide work function on surface cleaning method as studied by ultraviolet and X-ray photoelectron spectroscopies
- (2010) Weiyan Wang et al. APPLIED SURFACE SCIENCE
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating
- (2010) Yu Chao Yang et al. NEW JOURNAL OF PHYSICS
- Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure
- (2010) Lei Shi et al. Physica Status Solidi-Rapid Research Letters
- Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process
- (2010) C. Gopalan et al. SOLID-STATE ELECTRONICS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes
- (2009) H. X. Guo et al. APPLIED PHYSICS LETTERS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
- Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films
- (2009) Liang Chen et al. APPLIED PHYSICS LETTERS
- Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
- (2009) Qi Liu et al. APPLIED PHYSICS LETTERS
- Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells
- (2009) R. Symanczyk et al. IEEE ELECTRON DEVICE LETTERS
- Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory
- (2009) D. Kamalanathan et al. IEEE ELECTRON DEVICE LETTERS
- Selection of Optimized Materials for CBRAM Based on HT-XRD and Electrical Test Results
- (2009) Rainer Bruchhaus et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
- (2009) Yu Chao Yang et al. NANO LETTERS
- Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch
- (2008) Naoki Banno et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory
- (2008) Sung Hyun Jo et al. NANO LETTERS
- Epitaxial-Graphene/Graphene-Oxide Junction: An Essential Step towards Epitaxial Graphene Electronics
- (2008) Xiaosong Wu et al. PHYSICAL REVIEW LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now