Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

Redox reactions with empirical potentials: Atomistic battery discharge simulations

(2013) Wolf B. Dapp et al.   JOURNAL OF CHEMICAL PHYSICS

Switching kinetics of electrochemical metallization memory cells

(2013) Stephan Menzel et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

(2012) Stefan Tappertzhofen et al.   Nanoscale

Quantum conductance and switching kinetics of AgI-based microcrossbar cells

(2012) S Tappertzhofen et al.   NANOTECHNOLOGY

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

On the molecular origin of supercapacitance in nanoporous carbon electrodes

(2012) Céline Merlet et al.   NATURE MATERIALS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Scaling limits of resistive memories

(2011) Victor V Zhirnov et al.   NANOTECHNOLOGY

Switching kinetics of a Cu2S-based gap-type atomic switch

(2011) Alpana Nayak et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

First-Principles Investigation of Low EnergyE′Center Precursors in Amorphous Silica

(2011) Nathan L. Anderson et al.   PHYSICAL REVIEW LETTERS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

(2010) R. Soni et al.   JOURNAL OF APPLIED PHYSICS

Development and Validation of a ReaxFF Reactive Force Field for Cu Cation/Water Interactions and Copper Metal/Metal Oxide/Metal Hydroxide Condensed Phases

(2010) Adri C. T. van Duin et al.   JOURNAL OF PHYSICAL CHEMISTRY A

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

(2010) Y. Bernard et al.   MICROELECTRONIC ENGINEERING

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Charge conservation in electronegativity equalization and its implications for the electrostatic properties of fluctuating-charge models

(2009) Jiahao Chen et al.   JOURNAL OF CHEMICAL PHYSICS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS