$${ SIM}^2{ RRAM}$$ S I M 2 R R A M : a physical model for RRAM devices simulation

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

(2017) S Aldana et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts

(2017) Kechao Tang et al.   NANO LETTERS

A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach

(2016) G González-Cordero et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A new parameter to characterize the charge transport regime in Ni/HfO 2 /Si-n + -based RRAMs

(2016) M.A. Villena et al.   SOLID-STATE ELECTRONICS

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

(2016) Yi-Jen Huang et al.   Scientific Reports

Resistive switching effect ofAg/MoS2/FTO device

(2015) Bai Sun et al.   Functional Materials Letters

1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays

(2015) Chiyui Ahn et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

(2015) Jeremy Guy et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A SPICE Compact Model for Unipolar RRAM Reset Process Analysis

(2015) Francisco Jimenez-Molinos et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design

(2015) Pai-Yu Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM

(2015) S. Claramunt et al.   MICROELECTRONIC ENGINEERING

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

(2015) Stephan Menzel et al.   Nanoscale

Role of Sb dopant in Ag:GeS x -based conducting bridge random access memories

(2015) F. d'Acapito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching based Memristors

(2015) R. Picos et al.   Radioengineering

An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

(2015) M.A. Villena et al.   SOLID-STATE ELECTRONICS

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

(2015) Yuanyuan Shi et al.   Advanced Electronic Materials

Resistive switching memories in MoS2 nanosphere assemblies

(2014) Xiao-Yong Xu et al.   APPLIED PHYSICS LETTERS

Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

(2014) Eike Linn et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Analysis of the Switching Variability in $\hbox{Ni/HfO}_{2}$-Based RRAM Devices

(2014)   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis

(2014) Luca Larcher et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

(2014) Marc Bocquet et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simulation of thermal reset transitions in resistive switching memories including quantum effects

(2014) M. A. Villena et al.   JOURNAL OF APPLIED PHYSICS

A comprehensive analysis on progressive reset transitions in RRAMs

(2014) M A Villena et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Single Molecular Resistive Switch Obtained via Sliding Multiple Anchoring Points and Varying Effective Wire Length

(2014) Manabu Kiguchi et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Performance and reliability trade-offs for high-κ RRAM

(2014) Nagarajan Raghavan   MICROELECTRONICS RELIABILITY

Tunable multiferroic and bistable/complementary resistive switching properties of dilutely Li-doped BiFeO3 nanoparticles: an effect of aliovalent substitution

(2014) Mandar M. Shirolkar et al.   Nanoscale

A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

(2014) Mario Lanza   Materials

Forming-free bipolar resistive switching in nonstoichiometric ceria films

(2014) Muhammad Ismail et al.   Nanoscale Research Letters

Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

(2013) Stefan Tappertzhofen et al.   ACS Nano

A physical model of switching dynamics in tantalum oxide memristive devices

(2013) Patrick R. Mickel et al.   APPLIED PHYSICS LETTERS

Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

(2013) Yao-Feng Chang et al.   APPLIED PHYSICS LETTERS

Atomic-level quantized reaction of HfOx memristor

(2013) Yong-En Syu et al.   APPLIED PHYSICS LETTERS

Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

(2013) Yong-En Syu et al.   IEEE ELECTRON DEVICE LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

State Dynamics and Modeling of Tantalum Oxide Memristors

(2013) John Paul Strachan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Compact SPICE Model of Unipolar Memristive Devices

(2013) Xudong Fang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

SPICE modeling of nonlinear memristive behavior

(2013) Ioannis Vourkas et al.   INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS

Intrinsic nanofilamentation in resistive switching

(2013) Xing Wu et al.   JOURNAL OF APPLIED PHYSICS

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

(2013) L. M. Prócel et al.   JOURNAL OF APPLIED PHYSICS

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

An in-depth simulation study of thermal reset transitions in resistive switching memories

(2013) M. A. Villena et al.   JOURNAL OF APPLIED PHYSICS

Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical methodology

(2013) Xiaoyi Yang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanoscale resistive switching devices: mechanisms and modeling

(2013) Yuchao Yang et al.   Nanoscale

High-performance nonvolatile Al/AlOx/CdTe:Sb nanowire memory device

(2013) Chao Xie et al.   NANOTECHNOLOGY

Characteristics and mechanism of nano-polycrystalline La2O3thin-film resistance switching memory

(2013) Hongbin Zhao et al.   Physica Status Solidi-Rapid Research Letters

Facile synthesis of carbon nanotubes and their use in the fabrication of resistive switching memory devices

(2013) S. ChandraKishore et al.   RSC Advances

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

(2013) Seul Ji Song et al.   Scientific Reports

Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

(2013) Ilia Valov   ChemElectroChem

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

(2012) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content

(2012) W. Z. Chang et al.   APPLIED PHYSICS LETTERS

Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell

(2012) Somnath Mondal et al.   APPLIED PHYSICS LETTERS

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

(2012) Jung-Kyu Lee et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching in NiO-based nanowires by inserting Pt layers

(2012) Yen-Chun Huang et al.   APPLIED PHYSICS LETTERS

Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO3

(2012) Xin Guo   APPLIED PHYSICS LETTERS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Switching dynamics and charge transport studies of resistive random access memory devices

(2012) Branden Long et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide

(2012) Changhua Jin et al.   CHEMICAL COMMUNICATIONS

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

(2012) Tsung-Ming Tsai et al.   IEEE ELECTRON DEVICE LETTERS

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

(2012) Ximeng Guan et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures

(2012) Wei Zhu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

(2012) Ru Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

(2012) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure

(2012) W. Zhu et al.   JOURNAL OF APPLIED PHYSICS

An electron conduction model of resistive memory for resistance dispersion, fluctuation, filament structures, and Set/Reset mechanism

(2012) Masayoshi Sasaki   JOURNAL OF APPLIED PHYSICS

Analysis and modeling of resistive switching statistics

(2012) Shibing Long et al.   JOURNAL OF APPLIED PHYSICS

Simulation of multilevel switching in electrochemical metallization memory cells

(2012) Stephan Menzel et al.   JOURNAL OF APPLIED PHYSICS

Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films

(2012) Lu Liu et al.   JOURNAL OF APPLIED PHYSICS

Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine

(2012) Benlin Hu et al.   JOURNAL OF MATERIALS CHEMISTRY

Tunable threshold resistive switching characteristics of Pt–Fe2O3core–shell nanoparticleassembly by space charge effect

(2012) Yoon-Jae Baek et al.   Nanoscale

Modeling for multilevel switching in oxide-based bipolar resistive memory

(2012) Ji-Hyun Hur et al.   NANOTECHNOLOGY

Electrically tailored resistance switching in silicon oxide

(2012) Adnan Mehonic et al.   NANOTECHNOLOGY

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

(2012) Hee-Dong Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

(2012) Juqing Liu et al.   Small

Resistive switching characteristics of gallium oxide for nonvolatile memory application

(2012) Jyun-Bao Yang et al.   THIN SOLID FILMS

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

(2012) Hai Yang Peng et al.   Scientific Reports

Low operation voltage macromolecular composite memory assisted by graphene nanoflakes

(2012) Ying-Chih Lai et al.   Journal of Materials Chemistry C

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

Schottky Barrier Mediated Single-Polarity Resistive Switching in Pt Layer-Included TiOx Memory Device

(2011) Yu-Lung Chung et al.   ACS Applied Materials & Interfaces

Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure

(2011) H. F. Tian et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

(2011) Marc Bocquet et al.   APPLIED PHYSICS LETTERS

Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

(2011) Kuyyadi P. Biju et al.   APPLIED PHYSICS LETTERS

Mechanism of nonvolatile resistive switching in graphene oxide thin films

(2011) Fei Zhuge et al.   CARBON

A Detailed Study of the Forming Stage of an Electrochemical Resistive Switching Memory by KMC Simulation

(2011) Feng Pan et al.   IEEE ELECTRON DEVICE LETTERS

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

(2011) Z. Q. Wang et al.   IEEE ELECTRON DEVICE LETTERS

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

(2011) Albin Bayerl et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

(2011) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

(2011) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Device and SPICE modeling of RRAM devices

(2011) Patrick Sheridan et al.   Nanoscale

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Oxygen deficiency effect on resistive switching characteristics of copper oxide thin films

(2011) P. Hu et al.   PHYSICS LETTERS A

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

(2011) Davide Sacchetto et al.   PROCEEDINGS OF THE IEEE

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

(2011) Sheng-Yao Huang et al.   SOLID-STATE ELECTRONICS

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

(2011) Kou-Chen Liu et al.   THIN SOLID FILMS

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

(2010) Seunghyup Lee et al.   APPLIED PHYSICS LETTERS

Ultrafast resistive switching in SrTiO3:Nb single crystal

(2010) X. T. Zhang et al.   APPLIED PHYSICS LETTERS

Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device

(2010) Y. S. Chen et al.   APPLIED PHYSICS LETTERS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

(2010) Jiun-Jia Huang et al.   APPLIED PHYSICS LETTERS

Nanoscale resistive switching and filamentary conduction in NiO thin films

(2010) J. Y. Ye et al.   APPLIED PHYSICS LETTERS

Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

(2010) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching

(2010) H.J. Wan et al.   IEEE ELECTRON DEVICE LETTERS

Flexible Single-Component-Polymer Resistive Memory for Ultrafast and Highly Compatible Nonvolatile Memory Applications

(2010) Yongbian Kuang et al.   IEEE ELECTRON DEVICE LETTERS

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

(2010) Mario Lanza et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Multilevel resistive switching in Ti/CuxO/Pt memory devices

(2010) Sheng-Yu Wang et al.   JOURNAL OF APPLIED PHYSICS

The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device

(2010) Kou-Chen Liu et al.   MICROELECTRONICS RELIABILITY

Nanoscale memory devices

(2010) Andy Chung et al.   NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Scaling Theory for Unipolar Resistance Switching

(2010) J. S. Lee et al.   PHYSICAL REVIEW LETTERS

The Atomic Switch

(2010) Masakazu Aono et al.   PROCEEDINGS OF THE IEEE

Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film

(2010) June Sik Kwak et al.   THIN SOLID FILMS

Unipolar resistive switching characteristics in Co3O4 films

(2010) Xu Gao et al.   THIN SOLID FILMS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Effects of the compliance current on the resistive switching behavior of TiO2 thin films

(2009) X. Cao et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Measurements of current-voltage-induced heating in the Al/SrTiO3−xNy/Al memristor during electroformation and resistance switching

(2009) A. Shkabko et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3

(2009) Haiyang Peng et al.   APPLIED PHYSICS LETTERS

Nonvolatile resistive switching in graphene oxide thin films

(2009) C. L. He et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

(2009) Kazuki Nagashima et al.   APPLIED PHYSICS LETTERS

Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology

(2009) Lijie Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

(2009) D. Kamalanathan et al.   IEEE ELECTRON DEVICE LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching characteristics of MnOx-based ReRAM

(2009) Sen Zhang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

(2009) M. Lanza et al.   MICROELECTRONIC ENGINEERING

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)

(2009) Daniele Ielmini   MICROELECTRONIC ENGINEERING

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

(2009) M. Lanza et al.   MICROELECTRONICS RELIABILITY

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Conductance switching in Ag2S devices fabricated byin situsulfurization

(2009) M Morales-Masis et al.   NANOTECHNOLOGY

Statistical characterization of the memory effect in polyfluorene based non-volatile resistive memory devices

(2009) Bao Lei et al.   ORGANIC ELECTRONICS

Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film

(2009) Xinghua Liu et al.   ORGANIC ELECTRONICS

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

(2008) Hisashi Shima et al.   APPLIED PHYSICS LETTERS

Erasing characteristics of Cu[sub 2]O metal-insulator-metal resistive switching memory

(2008) A. Chen et al.   APPLIED PHYSICS LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly($o$-anthranilic acid) Thin Films

(2008) Dongjin Lee et al.   IEEE ELECTRON DEVICE LETTERS

Electronic two-terminal bistable graphitic memories

(2008) Yubao Li et al.   NATURE MATERIALS