A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope

Graphene MEMS: AFM Probe Performance Improvement

(2013) Cristina Martin-Olmos et al.   ACS Nano

Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO3

(2013) Ch. Lenser et al.   APPLIED PHYSICS LETTERS

Filament observation in metal-oxide resistive switching devices

(2013) Umberto Celano et al.   APPLIED PHYSICS LETTERS

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

(2013) Bing Chen et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

(2013) Bin Gao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

An in-depth simulation study of thermal reset transitions in resistive switching memories

(2013) M. A. Villena et al.   JOURNAL OF APPLIED PHYSICS

Structure and Electrical Characteristics of Zinc Oxide Thin Films Grown on Si (111) by Metal-organic Chemical Vapor Deposition

(2013) Yunfeng Wu et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

The unexpected effects of crystallization on Ta2O5 as studied by HRTEM and C-AFM

(2013) Umberto Celano et al.   MICROELECTRONIC ENGINEERING

Nanogap based graphene coated AFM tips with high spatial resolution, conductivity and durability

(2013) Mario Lanza et al.   Nanoscale

Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices

(2013) Umberto Celano et al.   Nanoscale

Detection of Fe2+ valence states in Fe doped SrTiO3 epitaxial thin films grown by pulsed laser deposition

(2013) Annemarie Koehl et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Multimode Resistive Switching in Single ZnO Nanoisland System

(2013) Jing Qi et al.   Scientific Reports

Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

(2013) Shibing Long et al.   Scientific Reports

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

(2013) Yuanmin Du et al.   AIP Advances

Improvement of Resistive Switching Performances in ZnLaO Film by Embedding a Thin ZnO Buffer Layer

(2013) D. Xu et al.   ECS Solid State Letters

Optimization of Chemical Structure of Schottky-Type Selection Diode for Crossbar Resistive Memory

(2012) Gun Hwan Kim et al.   ACS Applied Materials & Interfaces

Multilayer Graphene-Coated Atomic Force Microscopy Tips for Molecular Junctions

(2012) Yugeng Wen et al.   ADVANCED MATERIALS

Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization

(2012) M. Lanza et al.   ADVANCED MATERIALS

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

(2012) Yang Lu et al.   IEEE ELECTRON DEVICE LETTERS

Memristive Behavior of ZnO/Au Film Investigated by a TiN CAFM Tip and Its Model Based on the Experiments

(2012) Wenhong Wang et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Analysis and modeling of resistive switching statistics

(2012) Shibing Long et al.   JOURNAL OF APPLIED PHYSICS

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures

(2012) V. Iglesias et al.   MICROELECTRONICS RELIABILITY

CAFM investigations of filamentary conduction in Cu2O ReRAM devices fabricated using stencil lithography technique

(2012) Bharti Singh et al.   NANOTECHNOLOGY

Multifunctional cantilever-free scanning probe arrays coated with multilayer graphene

(2012) W. Shim et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

(2012) C.H. Cheng et al.   SOLID-STATE ELECTRONICS

Resistance switching of copper-doped tantalum oxide prepared by oxidation of copper-doped tantalum nitride

(2012) Shyankay Jou et al.   SURFACE & COATINGS TECHNOLOGY

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

(2011) V. Iglesias et al.   APPLIED PHYSICS LETTERS

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

(2011) K. Shubhakar et al.   APPLIED PHYSICS LETTERS

A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

(2011) Bin Gao et al.   APPLIED PHYSICS LETTERS

A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

(2011) B. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Reset Statistics of NiO-Based Resistive Switching Memories

(2011) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Ultra wide band frequency characterization of integrated TiTaO-based metal–insulator–metal devices

(2011) Thomas Bertaud et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide resistive memory switching mechanism based on conductive filament properties

(2011) G. Bersuker et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application

(2011) Lin Chen et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Grain boundary mediated leakage current in polycrystalline HfO2 films

(2011) K. McKenna et al.   MICROELECTRONIC ENGINEERING

Graphene Gate Electrode for MOS Structure-Based Electronic Devices

(2011) Jong Kyung Park et al.   NANO LETTERS

Local conductivity of epitaxial Fe-doped SrTiO3thin films

(2011) D. Kajewski et al.   PHASE TRANSITIONS

Grain boundary-driven leakage path formation in HfO2 dielectrics

(2011) G. Bersuker et al.   SOLID-STATE ELECTRONICS

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

(2011) Kou-Chen Liu et al.   THIN SOLID FILMS

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

(2011) Mario Lanza et al.   Nanoscale Research Letters

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Modified Percolation Model for Polycrystalline High-$ \kappa$ Gate Stack With Grain Boundary Defects

(2010) Nagarajan Raghavan et al.   IEEE ELECTRON DEVICE LETTERS

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

(2010) Mario Lanza et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films

(2010) Ruth Muenstermann et al.   JOURNAL OF APPLIED PHYSICS

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements

(2010) M. Lanza et al.   MICROELECTRONICS RELIABILITY

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

(2010) M. Lanza et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Effect of oxygen vacancies on the red emission of SrTiO3:Pr3+ phosphor films

(2009) Wei Wang et al.   APPLIED PHYSICS LETTERS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

(2009) Qi Liu et al.   IEEE ELECTRON DEVICE LETTERS

Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSi[sub x]O[sub 2−x] thin films using tunneling atomic force microscopy

(2009) W. Weinreich et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Breakdown and degradation of ultrathin Hf-based (HfO[sub 2])[sub x](SiO[sub 2])[sub 1−x] gate oxide films

(2009) H. J. Uppal et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Development of a conductive atomic force microscope with a logarithmic current-to-voltage converter for the study of metal oxide semiconductor gate dielectrics reliability

(2009) L. Aguilera et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

(2008) Weihua Guan et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices

(2008) Hokyung Park et al.   IEEE ELECTRON DEVICE LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

Performance improvement of CuO[sub x] with gradual oxygen concentration for nonvolatile memory application

(2008) P. Zhou et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

(2008) L. Aguilera et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE

Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

(2008) N Xu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

(2007) Seunghyup Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY