Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
出版年份 2012 全文链接
标题
Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 9, Pages 2363-2367
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2012-07-20
DOI
10.1109/ted.2012.2205692
参考文献
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- (2011) C. H. Cheng et al. IEEE ELECTRON DEVICE LETTERS
- Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory
- (2011) Bin Gao et al. IEEE ELECTRON DEVICE LETTERS
- Temperature Dependence of Resistive Switching in Aluminum/Anodized Aluminum Film Structure
- (2011) W. Zhu et al. Nanoscience and Nanotechnology Letters
- Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory
- (2010) Jaehoon Song et al. Applied Physics Express
- Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model
- (2010) Kyung Min Kim et al. APPLIED PHYSICS LETTERS
- Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices
- (2010) Z Fang et al. IEEE ELECTRON DEVICE LETTERS
- Investigation of State Stability of Low-Resistance State in Resistive Memory
- (2010) Jubong Park et al. IEEE ELECTRON DEVICE LETTERS
- $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
- (2010) Yi Wu et al. IEEE ELECTRON DEVICE LETTERS
- Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films
- (2010) Seunghyup Lee et al. JOURNAL OF APPLIED PHYSICS
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Nonpolar Resistance Switching in Anodic Oxide Alumina Films
- (2009) Vadim Sh. Yalishev et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Resistive switching in aluminum/anodized aluminum film structure without forming process
- (2009) W. Zhu et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching of aluminum oxide for flexible memory
- (2008) Sungho Kim et al. APPLIED PHYSICS LETTERS
- Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode
- (2008) M. Yin et al. IEEE ELECTRON DEVICE LETTERS
- Temperature dependence of voltage-controlled negative resistance and electroluminescence in Al–Al2O3–Au diodes
- (2008) T. W. Hickmott JOURNAL OF APPLIED PHYSICS
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