High-performance nonvolatile Al/AlOx/CdTe:Sb nanowire memory device

Here we demonstrate a room temperature processed nonvolatile memory device based on an Al/AlOx/CdTe: Sb nanowire (NW) heterojunction. Electrical analysis shows an echelon hysteresis composed of a high-resistance state (HRS) and a low-resistance state (LRS), which can allow it to write and erase data from the device. The conductance ratio is as high as 10(6), with a retention time of 3 x 10(4) s. Moreover, the SET voltages ranged from +6 to +8 V, whilst the RESET voltage similar to 0 V. In addition, flexible memory nano-devices on PET substrate with comparable switching performance at bending condition were fabricated. XPS analysis of the Al/AlOx/CdTe: Sb NW heterojunction after controlled Ar+ bombardment reveals that this memory behavior is associated with the presence of ultra-thin AlOx film. This Al/AlOx/CdTe: Sb NW heterojunction will open up opportunities for new memory devices with different configurations.