4.4 Article

Resistive switching characteristics of gallium oxide for nonvolatile memory application

期刊

THIN SOLID FILMS
卷 529, 期 -, 页码 200-204

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.10.026

关键词

RRAM; Gallium oxide; Oxygen vacancies

资金

  1. National Science Council of the Republic of China [NSC 100-2120-M-110-003, NSC-97-2112-M-110-009-MY3]

向作者/读者索取更多资源

This study investigates bipolar resistance switching memory in a fabricated Pt/GaOx/TiN device. Gallium oxide sputtered in ambient Ar shows a change in resistance ratio of two orders of magnitude. The enhancement of resistance ratio is also observed in the gallium oxide layer when deposited in ambient Ar/O-2. The X-ray photoelectron spectroscopy analysis shows that this gallium oxide in ambient Ar/O-2 can reduce the number of defects and enhance the stability of switching behavior. An analysis of current transport mechanism in the high resistance state indicates that the larger effective thickness can be attributed to the higher oxygen concentration, and can increase the resistance value of the high resistance state. (C) 2012 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据