Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell

(2010) Seul Ji Song et al.   APPLIED PHYSICS LETTERS

Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

(2010) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Resistive switching behaviors of ZnO nanorod layers

(2010)   APPLIED PHYSICS LETTERS

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices

(2009) B. Sun et al.   JOURNAL OF APPLIED PHYSICS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS