Article
Nanoscience & Nanotechnology
Wenzhong Zhang, Haruka Komatsu, Shingo Maruyama, Kenichi Kaminaga, Yuji Matsumoto
Summary: This study proposes the use of an ionic liquid crystal as a resistive switching layer in nonvolatile ReRAM devices, achieving low set voltage and stable switching behavior. The successful operation is attributed to the liquid crystal phase and the electric double layers formed at the electrode-ILC interfaces.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Ramesh Gayathri, Varghese Maria Angela, Panneerselvam Devibala, Predhanekar Mohamed Imran, Samuthira Nagarajan
Summary: In order to comprehend the relationship between structure and property as well as the significance of the donor-acceptor system in resistive memory devices, a series of new organic small molecules were designed and synthesized. The devices with A-N-D-N-A structures exhibited write-once-read-many memory behavior, while those based on D-N-D-N-D molecules only showed conductor property. The presence of donor/acceptor substituents significantly influenced the memory-switching behavior, suggesting that a D-A architecture is ideal for resistance switching characteristics in memory devices.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Eunpyo Park, Suyeon Jang, Gichang Noh, Yooyeon Jo, Dae Kyu Lee, In Soo Kim, Hyun-Cheol Song, Sangbum Kim, Joon Young Kwak
Summary: This work presents the design of an IGZO-based CTF synaptic device with synaptic functions and 128 levels of synaptic weight states. The efficiency of the device in an SNN system was evaluated using an SNN-restricted Boltzmann machine, achieving a high pattern-recognition accuracy.
Article
Nanoscience & Nanotechnology
Seung Jae Baik, Hyunjung Shin
Summary: The fundamental of the current information society is the trapping of charges in dielectric materials. NAND flash, which is widely used in semiconductors, is based on charge trapping in silicon nitride. The evolution of higher density NAND flash is advancing with memory cell stacking and requires an upscaling of the dielectric constant. This study demonstrates the importance of the amorphous phase and composition-graded dielectric thin film for the secure charge trapping and low-temperature fabrication of NAND flash.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Eui Joong Shin, Gyusoup Lee, Seongho Kim, Jun Hong Chu, Byung Jin Cho
Summary: We propose a novel memory device, named dual mechanism memory, which overcomes the limited Vth window in charge trap flash (CTF) memory. This device has a ferroelectric HfZrO(2) layer on the channel to control the conductance of the channel by remanent polarization (P-r), while trap-rich Si3N4 and tunnel SiO2 layers control the conductance by electron injection/removal. Compared to a reference memory, the dual-mechanism memory provides a wider memory window, exceeds the theoretical limit of ISPP slope, and shows improved retention characteristics.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Mahmoud N. Almadhoun, Maximilian Speckbacher, Brian C. Olsen, Erik J. Luber, Sayed Youssef Sayed, Marc Tornow, Jillian M. Buriak
Summary: The study demonstrates memristive behavior in Ga/GaOx/SiOx/p(+)-Si junctions, with a reversible insulator-metal transition and high ON/OFF ratio. The presence of a nanoscale gallium oxide layer plays a critical role in achieving reversible resistive switching.
Article
Chemistry, Multidisciplinary
Woon Ih Choi, Won-Joon Son, Richard Dronskowski, Youngtek Oh, Seung-Yeul Yang, Uihui Kwon, Dae Sin Kim
Summary: Through first-principles calculations and orbital interaction analysis, the authors reveal the mechanism behind the stable charge storage in charge-trap flash (CTF) memory. It is found that the positively charged fourfold-coordinated nitrogen (N+ center) plays a key role in the process, where the electron occupation of the N+ center leads to the formation of a new SiSi bond and the storage of the electron in a multicenter bonding states. Experimental data also support this model.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Anze Mraz, Rok Venturini, Damjan Svetin, Vitomir Sever, Ian Aleksander Mihailovic, Igor Vaskivskyi, Bojan Ambrozic, Goran Drazic, Maria D'Antuono, Daniela Stornaiuolo, Francesco Tafuri, Dimitrios Kazazis, Jan Ravnik, Yasin Ekinci, Dragan Mihailovic
Summary: Current trends in data processing have led to a search for new concepts of memory devices that prioritize efficiency, speed, and scalability. A promising new approach based on resistance switching in 1T-TaS2 has been investigated. The research explores the energy efficiency scaling of charge configuration memory (CCM) devices in relation to device size, data write time (tau(W)), and other parameters. The study finds that energy efficiency scales linearly with device size and data write time, only deviating from linearity when tau(W) approaches the intrinsic switching limit. CCM devices are shown to be faster and more energy efficient compared to current memory devices, utilizing 2.2 fJ, 16 ps electrical pulses for two-terminal switching.
Article
Materials Science, Multidisciplinary
Ying Lu, Shuang Gao, Fali Li, Youlin Zhou, Zhuolin Xie, Huali Yang, Wuhong Xue, Benlin Hu, Xiaojian Zhu, Jie Shang, Yiwei Liu, Run-Wei Li
Summary: This paper presents an intrinsically stretchable and twistable resistive switching memory with a large memory window and excellent retention, capable of ensuring data integrity during dynamic stretching-release processes. A logic-in-memory computation prototype is successfully implemented using three stretched memory cells.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Materials Science, Multidisciplinary
Eun Seo Jo, You Seung Rim
Summary: We conducted research to create reverse synapse plasticity using metal oxide semiconductor-based field-effect transistors. By adjusting the thickness of the Ga2O3 trapping layers, we examined changes in roughness and density and confirmed the variations and mechanisms of synaptic behaviors in relation to the properties of Ga2O3. The control of charge traps as functions of pulse time, input voltage, and initialization is crucial for achieving optimal device conditions.
MATERIALS TODAY PHYSICS
(2023)
Article
Chemistry, Physical
Zicong Guo, Yuanyuan Zhu, Jing Zhou, Xiaoyu Ma, Lixin Wang, Mengyao Chen, Yong Liu, Rui Xiong, Ziyu Wang, Chao Zuo, Hongjun Wang
Summary: Yttrium oxide (Y2O3) has been investigated as a functional material for resistive switching memories. However, there is a lack of understanding regarding the tuning of oxygen vacancies by various electrodes in Y2O3-based memories. In this study, non-crystalline Y2O3 films prepared through magnetron sputtering deposition were used to construct resistive switching memory devices with different structures. The devices exhibited nonvolatile bipolar resistive switching behaviors, which were dependent on the formation/rupture of conductive filaments composed of oxygen vacancies. The Y2O3-based memories with Pt/Y2O3/Pt structure showed competitive switching properties, including ultra-low set/reset voltages and high retention characteristics. The influence of different electrodes on oxygen vacancies and the morphologies of conductive filaments were discussed in detail. Additionally, physical models were proposed to clarify carrier transport mechanisms and switching behaviors for memories with different structures.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Review
Chemistry, Multidisciplinary
Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Sune, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Duenas, Tao Wang, Qiangfei Xia, Sebastian Pazos
Summary: RS devices face challenges in variability and reliability issues, and the current method of endurance evaluation shows high inaccuracy and unreliability. A new method proposed in this article aims to provide a more accurate characterization of endurance in RS devices, which could lead to more reliable literature and accelerate their integration in commercial products.
Article
Chemistry, Physical
Qiaojing Wang, Yibo Deng, Jianxia Chen, Liying Lu, Yingli Ma, Likun Zang
Summary: Resistive random-access memory (ReRAM) is a promising field, but it faces challenges of poor thermal stability and low ON/OFF ratio. By combining polymer materials with metal nanoparticles, the resistive switching properties can be effectively improved. This study developed a modified electrochemical strategy to synthesize dense polypyrrole-Ag nanoparticles (PPy-Ag NPs) composite films as the active layer in the memory device. The introduction of Ag NPs resulted in a bipolar switching phenomenon and the memory properties were influenced by the doping concentration of Ag NPs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Hongling Yu, Pan-Ke Zhou, Xiong Chen
Summary: This study proposes two resistive-switching memory devices based on covalent organic frameworks (COFs) to demonstrate the impact of intramolecular hydrogen bonding interactions. The results show that COF-EtD has a lower SET voltage, higher ON/OFF current ratio, and exceptional high-temperature endurance and solvent resistance. This finding provides inspiration for regulating WORM resistive switching behavior and contributes to the development of electronic memories and high-endurance, high-density electric storage materials.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Chih-Ying Chen, Yu-Hsiu Feng, Hong-Lin Lu, Feng-En Chang, Jui-Yuan Chen
Summary: In this study, an integrated structure called one phase-change memory one resistive random access memory (1P1R) was proposed to suppress the sneak current during stacking. The 1P1R device remained in a high resistance state to suppress the sneak current, and switched to a working state to write/read its state. The feasibility of the 1P1R structure was confirmed through electrical measurement, and the property analysis provided insight into its speculated mechanism. The results demonstrated that the novel 1P1R structure could effectively suppress sneak current, showing potential for 3D IC manufacturing.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Physical
Gianluca Milano, Giacomo Pedretti, Kevin Montano, Saverio Ricci, Shahin Hashemkhani, Luca Boarino, Daniele Ielmini, Carlo Ricciardi
Summary: By using a combination of self-organized nanowire networks and a memristive read-out layer, a hardware implementation of reservoir computing for recognition of spatio-temporal patterns and time-series prediction is demonstrated.
Article
Nanoscience & Nanotechnology
Matteo Farronato, Margherita Melegari, Saverio Ricci, Shahin Hashemkhani, Alessandro Bricalli, Daniele Ielmini
Summary: This article presents a three-terminal memtransistor device based on 2D semiconductors, which combines transistor behavior with resistive switching memory operation. The volatile switching behavior is explained by Ag cation migration. The researchers also demonstrate a chain-type memory array architecture similar to a NAND flash structure, paving the way for high-density 3D memories based on 2D semiconductors.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Piergiulio Mannocci, Andrea Baroni, Enrico Melacarne, Cristian Zambelli, Piero Olivo, Eduardo Perez, Christian Wenger, Daniele Ielmin
IEEE NANOTECHNOLOGY MAGAZINE
(2022)
Article
Physics, Applied
Yankun Cheng, Ya Lin, Tao Zeng, Xuanyu Shan, Zhongqiang Wang, Xiaoning Zhao, Daniele Ielmini, Haiyang Xu, Yichun Liu
Summary: This work demonstrates the implementation of Pavlovian conditioning through memristive synapse at the hardware level, paving the way for neuromorphic computing. By using the one-transistor/one-resistor architecture, the acquisition and extinction of Pavlovian conditioning were successfully demonstrated. The temporal relation between the conditioned and unconditioned stimuli was also established. This study provides a new approach to memristive neuromorphic computing.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Zhong Sun, Daniele Ielmini
Summary: Matrix computation is widely used in scientific and engineering fields, but it can be computationally complex in conventional digital computers. Analog matrix computing circuits based on resistive memory arrays provide a promising solution for fast and efficient matrix computations. This tutorial introduces the design principles, mapping strategies, stability requirements, and applications of analog matrix computing circuits.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2022)
Article
Neurosciences
Andrea Baroni, Artem Glukhov, Eduardo Perez, Christian Wenger, Enrico Calore, Sebastiano Fabio Schifano, Piero Olivo, Daniele Ielmini, Cristian Zambelli
Summary: This study proposes an IMC architecture based on RRAM crossbar arrays for accelerated neural network applications in survival analysis. The trade-off between performance and energy consumption is explored through synaptic weights mapping strategy and programming algorithms.
FRONTIERS IN NEUROSCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Matteo Farronato, Piergiulio Mannocci, Margherita Melegari, Saverio Ricci, Christian Monzio Compagnoni, Daniele Ielmini
Summary: This study presents a charge-trap memory device with a MoS2 channel, which shows outstanding linearity of potentiation and is suitable for high-density neuromorphic computing.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Andrea Baroni, Artem Glukhov, Eduardo Perez, Christian Wenger, Daniele Ielmini, Piero Olivo, Cristian Zambelli
Summary: This paper analyzes the benefits of a new programming algorithm in RRAM arrays, which achieves better conductance control and lower variability through Set and Reset operations. The superior performance stability of this algorithm is demonstrated through data retention analysis and artificial neural network simulation.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2022)
Article
Engineering, Electrical & Electronic
Marco Bertuletti, Irene Mu Noz-Martin, Stefano Bianchi, Andrea G. Bonfanti, Daniele Ielmini
Summary: In this work, a novel approach to the conceptual and technical design of integrated neural networks is proposed using novel in-memory computing circuits based on emerging nonvolatile memories. To reduce power consumption and complexity, a fully analog computing approach is introduced, replacing the analog-to-digital converter with a simple comparator. The impact of major nonidealities, such as PCM conductance variability, conductance drift, IR drop, and readout threshold, on accuracy is studied.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Piergiulio Mannocci, Enrico Melacarne, Daniele Ielmini
Summary: In-memory computing has become a promising candidate for distributed computing frameworks due to its energy efficiency and high throughput. This study proposes a closed-loop in-memory computing circuit for accelerating Ridge Regression and demonstrates its capabilities in realistic scenarios, comparing it with a commercial GPU. The results show significant improvements in energy efficiency and area efficiency, supporting the use of in-memory computing in future B5G and 6G networks.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
(2022)
Article
Multidisciplinary Sciences
Rohit Abraham, Maksym V. Kovalenko, Daniele Ielmini, Alessandro Milozzi, Sergey Tsarev, Rolf Bronnimann, Simon C. Boehme, Erfu Wu, Ivan Shorubalko
Summary: This study demonstrates second-order dynamics in halide perovskite memristive diodes (memdiodes), capturing both timing-and rate-based plasticity. By exploiting ion migration, back diffusion, and modulable Schottky barriers, general design rules are established for higher-order memristors, enabling complex binocular orientation selectivity without the need for complicated circuitry.
Article
Multidisciplinary Sciences
S. Bianchi, I. Munoz-Martin, E. Covi, A. Bricalli, G. Piccolboni, A. Regev, G. Molas, J. F. Nodin, F. Andrieu, D. Ielmini
Summary: Authors propose a bio-inspired recurrent neural network based on resistive-switching synaptic arrays for autonomous exploration. The network utilizes homeostatic Hebbian learning for improved efficiency in reinforcement learning tasks. Experimental and theoretical discussions are presented to benchmark the accuracy and resilience of the proposed architecture.
NATURE COMMUNICATIONS
(2023)
Article
Nanoscience & Nanotechnology
Paolo Fantini, Nicola Polino, Andrea Ghetti, Daniele Ielmini
Summary: An ovonic threshold switch (OTS) based on chalcogenide glasses is used in storage class memory (SCM) arrays as a selecting device. The switching phenomenon of OTS, which involves electronic transport, joule heating, and phase transition, has attracted significant interest. This study reveals that the current-voltage characteristic near the switching point reflects carrier multiplication. The physical mechanism of threshold switching is explained by bipolar impact ionization leading to avalanche multiplication, resulting in the typical S-shaped characteristic. Numerical simulations based on this physics-based model accurately predict the switching properties of OTS at different chalcogenide thicknesses and compositions. These findings provide a theoretical framework for future design and optimization of OTS in memory and computing applications.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Computer Science, Hardware & Architecture
Piergiulio Mannocci, Daniele Ielmini
Summary: Matrix-based computing is widely used in machine learning applications, but traditional von-Neumann architecture has limitations in energy and latency. In-memory computing (IMC) performs computation directly within the memory, eliminating the need for data transfer. This article presents a generalized closed-loop IMVM circuit that can perform any linear matrix operation by memory remapping, making it an ideal candidate for general-purpose machine learning accelerators.
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS
(2023)
Article
Engineering, Electrical & Electronic
Tommaso Rizzi, Andrea Baroni, Artem Glukhov, Davide Bertozzi, Christian Wenger, Daniele Ielmini, Cristian Zambelli
Summary: Resistive Random Access Memory (RRAM) technology has the potential to improve FPGA performance, reduce footprint, and lower energy requirements compared to CMOS-based products. However, high programming power consumption and non-ideal behaviors of the RRAM device hinder its integration in FPGAs. This work explores the impact of different programming procedures on run-time performance and highlights the importance of target resistive state selection and programming algorithm in reducing delay and energy metrics and improving robustness against variations.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2023)
Article
Engineering, Electrical & Electronic
Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Bela Pecz, Zsolt Fogarassy, Emanuela Schiliro, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro
Summary: This study demonstrates the growth of oriented AlN thin films on 4H-SiC substrates using PE-ALD technique, and investigates the impact of NH3 plasma pulsing on the microstructure and orientation degree of the AlN layers. The structural characterization reveals different polymorphic structures depending on the NH3 plasma pulsing time, and electrical nanoscopic characterization shows a correlation between the AlN crystalline phases and the insulating properties.
MICROELECTRONIC ENGINEERING
(2024)
Article
Engineering, Electrical & Electronic
Theo Levert, Alter Zakhtser, Julien Duval, Chloe Raguenez, Stephane Verdier, Delphine Le Cunff, Jean-Herve Tortai, Bernard Pelissier
Summary: In this study, the robustness of optical constants and optical band gap determination of three different materials is compared using a combination of spectroscopic ellipsometry and energy loss signal of X-ray photoelectron spectroscopy. The hybridization of these two techniques provides a new robust method for determining the band gap of the studied materials and other optical properties over a wide energy range.
MICROELECTRONIC ENGINEERING
(2024)
