An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

标题
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
作者
关键词
RRAMs, Thermal effects, Device simulation, Quantum effects
出版物
SOLID-STATE ELECTRONICS
Volume 111, Issue -, Pages 47-51
出版商
Elsevier BV
发表日期
2015-05-15
DOI
10.1016/j.sse.2015.04.008

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