Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

标题
Unipolar resistive switching phenomena in fully transparent SiN-based memory cells
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 12, Pages 125020
出版商
IOP Publishing
发表日期
2012-11-12
DOI
10.1088/0268-1242/27/12/125020

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