Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

(2010) Jung Ho Yoon et al.   APPLIED PHYSICS LETTERS

Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell

(2010) Seul Ji Song et al.   APPLIED PHYSICS LETTERS

Understanding structure-property relationship of resistive switching oxide thin films using a conical filament model

(2010) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

(2010) In Kyeong Yoo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Scaling Theory for Unipolar Resistance Switching

(2010) J. S. Lee et al.   PHYSICAL REVIEW LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

(2008) S.-E. Ahn et al.   ADVANCED MATERIALS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Thermodynamics of oxygen defective Magnéli phases in rutile: A first-principles study

(2008) Leandro Liborio et al.   PHYSICAL REVIEW B

Crystallization kinetics of Ga–Sb–Te films for phase change memory

(2007) Huai-Yu Cheng et al.   THIN SOLID FILMS