Measurements of current-voltage-induced heating in the Al/SrTiO3-xNy/Al memristor during electroformation and resistance switching

Heating of the Al/SrTiO3-xNy/Al memristor is characterized during electroformation and switching of the resistances. The electrode with the higher voltage potential is heated to higher temperatures than the electrode with the lower potential, suggesting a reversible (nonstable) displacement of the anions in a low voltage region (vertical bar V vertical bar < +/-3 V). Application of a threshold voltage appropriate for resistance switching (vertical bar V vertical bar >= +/-3 V) facilitates migration of anions to the anode interface and increases the local anode temperature to a maximum of 285 degrees C. The hysteretic I-V curves are discussed taking into account tunnel barrier formation/break and inhomogeneous Schottky barrier modification at the anode interface. (C) 2009 American Institute of Physics. [doi:10.1063/1.3238563]