Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

标题
Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 10, Pages 3566-3573
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-08-25
DOI
10.1109/ted.2011.2162518

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