Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

(2010) Daniele Ielmini et al.   APPLIED PHYSICS LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

(2010) In Kyeong Yoo et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Model of metallic filament formation and rupture in NiO for unipolar switching

(2010) Hyung Dong Lee et al.   PHYSICAL REVIEW B

Resistance transition in metal oxides induced by electronic threshold switching

(2009) D. Ielmini et al.   APPLIED PHYSICS LETTERS

Large 1/f noise of unipolar resistance switching and its percolating nature

(2009) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices

(2009) Carlo Cagli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

(2009) Ludovic Goux et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

(2009) S. H. Chang et al.   PHYSICAL REVIEW LETTERS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

(2008) S. H. Chang et al.   APPLIED PHYSICS LETTERS

Scaling behaviors of reset voltages and currents in unipolar resistance switching

(2008) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

A Temperature-Accelerated Method to Evaluate Data Retention of Resistive Switching Nonvolatile Memory

(2008) An Chen et al.   IEEE ELECTRON DEVICE LETTERS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

The role of electrical and thermal contact resistance for Joule breakdown of single-wall carbon nanotubes

(2008) Eric Pop   NANOTECHNOLOGY

Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses

(2008) Daniele Ielmini   PHYSICAL REVIEW B

Electrical properties of NiO films obtained by high-temperature oxidation of nickel

(2007) Salah A. Makhlouf   THIN SOLID FILMS