A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

标题
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 50, Issue 33, Pages 335103
出版商
IOP Publishing
发表日期
2017-06-14
DOI
10.1088/1361-6463/aa7939

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