Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

标题
Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 12, Pages 3578-3582
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2012-11-17
DOI
10.1109/ted.2012.2220142

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