Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

标题
Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films
作者
关键词
-
出版物
Nanoscale Research Letters
Volume 7, Issue 1, Pages 178
出版商
Springer Nature
发表日期
2012-03-08
DOI
10.1186/1556-276x-7-178

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