Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell
出版年份 2012 全文链接
标题
Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 101, Issue 8, Pages 083506
出版商
AIP Publishing
发表日期
2012-08-24
DOI
10.1063/1.4747695
参考文献
相关参考文献
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- (2012) Yang Yin Chen et al. APPLIED PHYSICS LETTERS
- Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices
- (2012) Somnath Mondal et al. IEEE ELECTRON DEVICE LETTERS
- Structural and Electrical Characterization of Lu2O3Dielectric Layer for High Performance Analog Metal–Insulator–Metal Capacitors
- (2012) Somnath Mondal et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory
- (2011) Tuo-Hung Hou et al. APPLIED PHYSICS LETTERS
- Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment
- (2011) Hsueh-Chih Tseng et al. APPLIED PHYSICS LETTERS
- Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach
- (2011) Haowei Zhang et al. APPLIED PHYSICS LETTERS
- Correlating structural and resistive changes in Ti:NiO resistive memory elements
- (2010) O. Heinonen et al. APPLIED PHYSICS LETTERS
- Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
- (2010) Min-Chen Chen et al. APPLIED PHYSICS LETTERS
- $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
- (2010) Yi Wu et al. IEEE ELECTRON DEVICE LETTERS
- Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
- (2009) Sheng-Yu Wang et al. APPLIED PHYSICS LETTERS
- Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
- (2009) Qi Liu et al. IEEE ELECTRON DEVICE LETTERS
- Resistive switching characteristics of MnOx-based ReRAM
- (2009) Sen Zhang et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer
- (2008) Tung-Ming Pan et al. APPLIED PHYSICS LETTERS
- Resistive switching memory effect of ZrO[sub 2] films with Zr[sup +] implanted
- (2008) Qi Liu et al. APPLIED PHYSICS LETTERS
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