Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks

Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects

(2018) Kechao Tang et al.   JOURNAL OF APPLIED PHYSICS

A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET

(2017) Abhitosh Vais et al.   IEEE ELECTRON DEVICE LETTERS

Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

(2017) S. Pazos et al.   JOURNAL OF APPLIED PHYSICS

On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

(2017) Abhitosh Vais et al.   JOURNAL OF APPLIED PHYSICS

Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing

(2017) Jun Lin et al.   MICROELECTRONIC ENGINEERING

Temperature dependence of trapping effects in metal gates/Al 2 O 3 /InGaAs stacks

(2017) F. Palumbo et al.   SOLID-STATE ELECTRONICS

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

(2017) Huy Binh Do et al.   AIP Advances

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks

(2016) Kechao Tang et al.   ACS Applied Materials & Interfaces

Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

(2016) S. Yoshida et al.   APPLIED PHYSICS LETTERS

Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

(2015) Abhitosh Vais et al.   APPLIED PHYSICS LETTERS

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

(2015) Abhitosh Vais et al.   APPLIED PHYSICS LETTERS

The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure

(2015) Igor Krylov et al.   JOURNAL OF APPLIED PHYSICS

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

(2015) Tyler Kent et al.   JOURNAL OF CHEMICAL PHYSICS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

(2015) Vladimir Djara et al.   MICROELECTRONIC ENGINEERING

On MOS admittance modeling to study border trap capture/emission and its effect on electrical behavior of high-k/III–V MOS devices

(2015) Abhitosh Vais et al.   MICROELECTRONIC ENGINEERING

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

(2014) R. V. Galatage et al.   JOURNAL OF APPLIED PHYSICS

Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

(2014) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures

(2014) Chunmeng Dou et al.   MICROELECTRONICS RELIABILITY

Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces

(2013) Jaesoo Ahn et al.   APPLIED PHYSICS LETTERS

Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

(2013) Eddy Simoen et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal–insulator–semiconductor capacitors with post-deposition annealing

(2013) Hee-Sung Kang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

(2012) Susanne Stemmer et al.   APPLIED PHYSICS LETTERS

Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

(2012) V. Djara et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

(2012) Yu Yuan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

(2012) Takuya Hoshii et al.   JOURNAL OF APPLIED PHYSICS

A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors

(2011) Guy Brammertz et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown

(2011) E. Miranda et al.   MICROELECTRONICS RELIABILITY

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

(2011) Tibor Grasser   MICROELECTRONICS RELIABILITY

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

(2011) Robert M. Wallace et al.   MRS BULLETIN

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Quantification of trap densities at dielectric/III–V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

(2008) J. Q. Lin et al.   IEEE ELECTRON DEVICE LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES