Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Oxygen vacancy levels and electron transport in Al2O3

(2010) D. Liu et al.   APPLIED PHYSICS LETTERS

Oxygen interstitial structures in close-packed metal oxides

(2010) Alexey A. Sokol et al.   CHEMICAL PHYSICS LETTERS

Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures

(2010) M. S. Miao et al.   JOURNAL OF APPLIED PHYSICS

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Hybrid functionals applied to extended systems

(2008) M Marsman et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications

(2008) DI Garcia-Gutierrez et al.   MICROSCOPY AND MICROANALYSIS