A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

(2011) Yu Yuan et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

(2011) Davide Garetto et al.   SOLID-STATE ELECTRONICS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications

(2010) Matthias Passlack et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

(2010) Yoontae Hwang et al.   JOURNAL OF APPLIED PHYSICS

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

(2010) Tibor Grasser et al.   PHYSICAL REVIEW B