Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

Ab initio molecular dynamics simulations of properties of a-Al2O3 /vacuum and a-ZrO2 /vacuum vs a-Al2O3∕Ge(100)(2×1) and a-ZrO2∕Ge(100)(2×1) interfaces

(2009) Evgueni A. Chagarov et al.   JOURNAL OF CHEMICAL PHYSICS

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

(2009) Evgueni A. Chagarov et al.   SURFACE SCIENCE

In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors

(2008) Cheng-Wei Cheng et al.   APPLIED PHYSICS LETTERS

Indium stability on InGaAs during atomic H surface cleaning

(2008) F. S. Aguirre-Tostado et al.   APPLIED PHYSICS LETTERS

Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

(2008) H. C. Chiu et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Formation mechanisms of polar and non-polar amorphous oxide–semiconductor interfaces

(2008) Evgueni A. Chagarov et al.   SURFACE SCIENCE