Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks

(2016) Felix Palumbo et al.   MICROELECTRONICS RELIABILITY

Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

(2015) F. Palumbo et al.   APPLIED PHYSICS LETTERS

Physical mechanism of progressive breakdown in gate oxides

(2014) Felix Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

(2014) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures

(2012) F. Palumbo et al.   IEEE ELECTRON DEVICE LETTERS

An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown

(2011) E. Miranda et al.   MICROELECTRONICS RELIABILITY

Thermochemical resistive switching: materials, mechanisms, and scaling projections

(2011) Daniele Ielmini et al.   PHASE TRANSITIONS

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

(2010) Enrique A Miranda et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

(2009) M.A. Panzer et al.   IEEE ELECTRON DEVICE LETTERS

On Voltage Acceleration Models of Time to Breakdown—Part I: Experimental and Analysis Methodologies

(2009) Ernest Y. Wu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

(2008) R. Pagano et al.   MICROELECTRONICS RELIABILITY