标题
Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 1, Pages 014106
出版商
AIP Publishing
发表日期
2014-01-07
DOI
10.1063/1.4861033
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- A Comparative Study of Different Physics-Based NBTI Models
- (2013) S. Mahapatra et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Correlation between Ga-O signature and midgap states at the Al2O3/In0.53Ga0.47As interface
- (2012) Igor Krylov et al. APPLIED PHYSICS LETTERS
- Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces
- (2012) Igor Krylov et al. APPLIED PHYSICS LETTERS
- Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion
- (2012) Han-Ping Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates
- (2012) Junghyo Nah et al. NANO LETTERS
- Effect of H on interface properties of Al2O3/In0.53Ga0.47As
- (2011) Zuoguang Liu et al. APPLIED PHYSICS LETTERS
- Defect states at III-V semiconductor oxide interfaces
- (2011) L. Lin et al. APPLIED PHYSICS LETTERS
- A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices
- (2011) Yu Yuan et al. IEEE ELECTRON DEVICE LETTERS
- Effects of Positive and Negative Stresses on III–V MOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
- (2011) N. Wrachien et al. IEEE ELECTRON DEVICE LETTERS
- The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
- (2011) Tibor Grasser et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
- (2011) J. R. Weber et al. JOURNAL OF APPLIED PHYSICS
- Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors
- (2011) R. D. Long et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?
- (2011) W. Wang et al. MICROELECTRONIC ENGINEERING
- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
- (2010) Eun Ji Kim et al. APPLIED PHYSICS LETTERS
- Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
- (2010) Roman Engel-Herbert et al. JOURNAL OF APPLIED PHYSICS
- Model of interface states at III-V oxide interfaces
- (2009) John Robertson APPLIED PHYSICS LETTERS
- The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
- (2009) H. C. Lin et al. APPLIED PHYSICS LETTERS
- Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures
- (2009) F. Crupi et al. JOURNAL OF APPLIED PHYSICS
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