Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Is interfacial chemistry correlated to gap states for high-k/III–V interfaces?

(2011) W. Wang et al.   MICROELECTRONIC ENGINEERING

Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2

(2010) T. Hoshii et al.   APPLIED PHYSICS LETTERS

Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces

(2010) T. Haimoto et al.   APPLIED PHYSICS LETTERS

Effects of surface passivation during atomic layer deposition of Al2O3 on In0.53Ga0.47As substrates

(2010) L. Lamagna et al.   MICROELECTRONIC ENGINEERING

Model of interface states at III-V oxide interfaces

(2009) John Robertson   APPLIED PHYSICS LETTERS

In[sub 0.53]Ga[sub 0.47]As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al[sub 2]O[sub 3], HfO[sub 2], and LaAlO[sub 3] gate dielectrics

(2009) Han Zhao et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)

(2009) Paul C. McIntyre et al.   MICROELECTRONIC ENGINEERING

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

(2009) Han-Chung Lin et al.   MICROELECTRONIC ENGINEERING

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

(2008) J. Q. Lin et al.   IEEE ELECTRON DEVICE LETTERS

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

(2008) Shinichi Takagi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A