Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra

(2014) Eddy Simoen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

(2014) R. V. Galatage et al.   JOURNAL OF APPLIED PHYSICS

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures

(2014) Chunmeng Dou et al.   MICROELECTRONICS RELIABILITY

Al2O3/InGaAs Metal-Oxide-Semiconductor Interface Properties: Impact of Gd2O3and Sc2O3Interfacial Layers by Atomic Layer Deposition

(2014) M. Ameen et al.   ECS Journal of Solid State Science and Technology

A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors

(2013) Chen Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

(2012) Susanne Stemmer et al.   APPLIED PHYSICS LETTERS

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

(2012) Davide Garetto et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

(2012) Yu Yuan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs

(2012) Sofia Johansson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

(2011) L. Vandelli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

(2011) Tibor Grasser   MICROELECTRONICS RELIABILITY

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics

(2010) James W. Reiner et al.   ADVANCED MATERIALS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics

(2010) Arif M. Sonnet et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

(2010) Tibor Grasser et al.   PHYSICAL REVIEW B