Article
Engineering, Electrical & Electronic
Zhiyu Guo, Jingmin Wu, Run Tian, Fengxuan Wang, Pengfei Xu, Xiang Yang, Zhongchao Fan, Fuhua Yang, Zhi He
Summary: In this study, a method was developed to extract trench sidewall and trench bottom capacitances of a SiC trench MOS structure. High-frequency capacitance-voltage measurements were conducted on trench MOS capacitors, revealing a proportional relationship between trench MOS capacitances and trench bottom and mesa widths. By extracting oxide thicknesses and studying capacitance contributions from different parts of the trench structure, the flat-band voltage and charges in oxide of MOS capacitors from sidewall and bottom could be analyzed. This method offers a convenient and precise technology for process control in SiC trench MOSFETs manufacturing.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Zhiyu Guo, Zhi He, Fengxuan Wang, Jingmin Wu, Xiang Yang, Zhongchao Fan, Fuhua Yang
Summary: This work investigates the characteristics of trench sidewall capacitance in a 4H-SiC stepped thick-oxide trench MOS structure. Different test patterns of SiC trench MOS capacitors with varying structures and geometric parameters were designed and fabricated. The results show significant positive shifts in the flat-band voltages of the MOS from the upper and lower parts of trench sidewall step, indicating the presence of a large number of negative charges in the sidewall oxide film. The net oxide charge density of the MOS in the lower part of sidewall step was smaller, potentially due to the presence of massive shallow states in the oxide and the poor quality of the thick-oxide film. This study provides a convenient technology to monitor the trench MOS structure during SiC trench MOSFET fabrication.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Mingu Ji, Woong Choi
Summary: In this study, capacitance-voltage analysis of Al2O3/WS2 metal-oxide-semiconductor capacitors revealed n-type conduction in WS2 with an electron concentration of around 10(17) cm(-3) and a relatively low minimum trap density of about 10(11)-10(12) eV(-1) cm(-2) at the Al2O3/WS2 interface. The low dispersion of accumulation capacitance with respect to frequency suggests a relatively low interface trap density, which can be potentially important in using Al2O3/WS2 gate stack and understanding the device operation of WS2 and other transition metal dichalcogenides.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Ali Riza Deniz
Summary: In this study, lead oxide (PbO2) was used as an interface material in Schottky diode applications, and its morphological properties were analyzed. Reference diode and PbO2/n-Si heterojunctions were fabricated and the parameters were calculated. The experiment showed that the diode parameters were strongly temperature-dependent, and the diode capacitance decreased with increasing frequency.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Fulya Esra Cimilli Catir
Summary: In this study, rGO was synthesized from GO using a chemical reduction method, and then deposited on n-InP substrate through spray pyrolysis. The structural and optical properties of the rGO film were analyzed, and an Au/rGO/n-InP device was fabricated for studying its current-voltage characteristics at different temperatures. The temperature-dependent behavior of the device parameters BH and ideality factor were explained by the thermionic field emission theory with Gaussian distribution of BH values.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Hongwei Liu, Xinwei Wang, Pingjuan Niu, Philip Shields, Zanyun Zhang, Xiaoyun Li, Chao Liu, Duxiang Wang
Summary: The research shows that in the growth of InP/InGaAs/InP PIN photodetector material, controlling the diffusion depth of Zn doping in p-InP can affect the high frequency characteristics of the PIN photodiode, providing a new reference for the design of photodiodes and varactors in optical microwave mixed circuits.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Hae In Yang, Woong Choi
Summary: Capacitance-voltage measurements of metal-oxide-semiconductor capacitors composed of monolayer MoS2 and Al2O3 gate dielectric show high-frequency behavior, with zero minimum capacitance. The results demonstrate the importance of understanding quantum capacitance for enhanced performance in metal-oxide-semiconductor devices based on monolayer MoS2 or other transition metal dichalcogenides.
MICROELECTRONIC ENGINEERING
(2021)
Article
Chemistry, Physical
Navneet Bhardwaj, Bhanu B. Upadhyay, Yogendra K. Yadav, Sreenadh Surapaneni, Swaroop Ganguly, Dipankar Saha
Summary: In this study, 10 nm of amorphous Nb2O5 was successfully grown on an AlGaN/GaN heterostructure, with ideal stoichiometry and a band gap of 4.15 eV determined by XPS analysis. Additionally, TEM confirmed the thickness and crystallinity of the oxide, while AFM measured a RMS roughness of 1.32 nm. The capacitive behavior of Nb2O5 and its interface characteristics with AlGaN were estimated by CV characteristics.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Dan Yang, Yongqing Huang, Xiaofeng Duan, Kai Liu, Yisu Yang, Xiaomin Ren
Summary: In this study, a new type of InGaAs/InP photodetector with NiO transparent p-region and electrode is reported. By using NiO film, the device eliminates the need for highly doped p-contact layer and opaque p-contact metal electrode, simplifying the epitaxial layer and avoiding optical power loss. Numerical simulation results demonstrate that this new structure can improve the 3-dB bandwidth and RF output power of the photodetector.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Physics, Condensed Matter
Yangyang Zhao, Jun Chen
Summary: This paper simulated an InGaAs/InP separate absorption, grading, charge, and multiplication avalanche photodiode (SAGCM-APD) with a heterojunction multiplication layer and a hybrid absorption layer, and investigated the effect of the thickness of the heterojunction multiplication layer on the performance of the device.
PHYSICA B-CONDENSED MATTER
(2022)
Article
Engineering, Electrical & Electronic
Yu Fu, Shozo Kono, Hiroshi Kawarada, Atsushi Hiraiwa
Summary: MOS capacitors with C-Si-O diamond as semiconductors and SiO2/Al2O3 as gate insulators were fabricated and characterized, showing excellent electrical performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Computer Science, Information Systems
Ya-Wen Ho, Tejender Singh Rawat, Zheng-Kai Yang, Sparsh Pratik, Guan-Wen Lai, Yen-Liang Tu, Albert Lin
Summary: Artificial neural networks and multilayer perceptrons are efficient in designing semiconductor device models, but require a large number of parameters and longer simulation time. Optimizing network architecture for better learning is important yet tedious. Neuro-evolution method can achieve lower RMSE and faster convergence for semiconductor device compact models compared to traditional MLP models.
Article
Engineering, Electrical & Electronic
Kyul Ko, Dae-Hwan Ahn, Hoyoung Suh, Byeong-Kwon Ju, Jae-Hoon Han
Summary: The characteristics of ferroelectric capacitors with varying Al2O3 layer thickness and crystallization temperature were studied, and it was found that high remanent polarization and low interface trap density can be achieved by optimizing these parameters. Furthermore, the ferroelectric capacitor also exhibits good retention and endurance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe
Summary: The density and energy level of hole traps in GaN-based metal-oxide-semiconductor (MOS) devices depend crucially on the concentration of magnesium (Mg) dopants in the GaN layers. Regardless of the degree of dopant activation, MOS capacitors on heavily Mg-doped GaN epilayers demonstrate hole accumulation and very low interface state densities.
APPLIED PHYSICS EXPRESS
(2023)
Article
Engineering, Electrical & Electronic
Hailian Liang, Ling Zhu, Xiaofeng Gu
Summary: A dual-MOS-triggered silicon-controlled rectifier (DMTSCR) has been developed for high-voltage electrostatic discharge (ESD) protection, featuring advantages such as high holding voltage, strong ESD robustness, and low turn-on resistance through optimized embedded structures. With a figure of merit as high as 1.8 mA/mu m(2), the optimized DMTSCR demonstrates increased holding voltage, decreased turn-on resistance, and consistent electrical characteristics compared to experimental devices. This layout-optimized DMTSCR is a promising solution for meeting various HV ESD protection requirements.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
Sylvester Sahayaraj, Guy Brammertz, Bart Vermang, Samaneh Ranjbar, Marc Meuris, Jef Vleugels, Jef Poortmans
Article
Materials Science, Multidisciplinary
Leo Choubrac, Guy Brammertz, Nicolas Barreau, Ludovic Arzel, Sylvie Harel, Marc Meuris, Bart Vermang
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2018)
Article
Materials Science, Multidisciplinary
Thierry Kohl, G. Brammertz, J. de Wild, M. Neuwirth, M. Meuris, J. Poortmans, B. Vermang
Article
Chemistry, Physical
Sylvester Sahayaraj, Guy Brammertz, Bart Vermang, Aniket Mule, Thomas Schnabel, Marc Meuris, Jef Vleugels, Jef Poortmans
JOURNAL OF MATERIALS CHEMISTRY A
(2018)
Article
Materials Science, Multidisciplinary
S. Suresh, J. de Wild, T. Kohl, D. G. Buldu, G. Brammertz, M. Meuris, J. Poortmans, O. Isabella, M. Zeman, B. Vermang
Article
Materials Science, Multidisciplinary
G. Brammertz, T. Kohl, J. De Wild, M. Meuris, B. Vermang, J. Poortmans
Article
Materials Science, Multidisciplinary
J. de Wild, M. Simor, D. G. Buldu, T. Kohl, G. Brammertz, M. Meuris, J. Poortmans, B. Vermang
Article
Materials Science, Multidisciplinary
Hossam Elanzeery, Michele Melchiorre, Mohit Sood, Finn Babbe, Florian Werner, Guy Brammertz, Susanne Siebentritt
PHYSICAL REVIEW MATERIALS
(2019)
Article
Energy & Fuels
S. Oueslati, M. Kauk-Kuusik, C. Neubauer, V. Mikli, D. Meissner, G. Brammertz, B. Vermang, J. Krustok, M. Grossberg
Article
Energy & Fuels
Jessica de Wild, Thierry Kohl, Dilara G. Buldu, Gizem Birant, David Mate Parragh, Guy Brammertz, Marc Meuris, Jef Poortmans, Bart Vermang
IEEE JOURNAL OF PHOTOVOLTAICS
(2020)
Article
Energy & Fuels
Guy Brammertz, Thierry Kohl, Jessica de Wild, Dilara Gokcen Buldu, Gizem Birant, Marc Meuris, Jozef Poortmans, Bart Vermang
IEEE JOURNAL OF PHOTOVOLTAICS
(2020)
Article
Energy & Fuels
Sarallah Hamtaei, Guy Brammertz, Marc Meuris, Jef Poortmans, Bart Vermang
Summary: This study investigated the impact of various processing factors on the efficiency of pure sulfide CIGS solar cells. It identified four key factors affecting the absorber, with two supported by previous literature and two new factors uncovered through statistical evidence. The research also highlighted the significance of alkali barrier diffusion on the absorber and the negative linear correlation between absorber roughness and device efficiency.
Article
Chemistry, Physical
Jessica de Wild, Dilara Gokcen Buldu, Thomas Schnabel, Marcel Simor, Thierry Kohl, Gizem Birant, Guy Brammertz, Marc Meuris, Jef Poortmans, Bart Vermang
ACS APPLIED ENERGY MATERIALS
(2019)
Article
Chemistry, Physical
Bart Vermang, Guy Brammertz, Marc Meuris, Thomas Schnabel, Erik Ahlswede, Leo Choubrac, Sylvie Harel, Christophe Cardinaud, Ludovic Arzel, Nicolas Barreau, Joop van Deelen, Pieter-Jan Bolt, Patrice Bras, Yi Ren, Eric Jaremalm, Samira Khelifi, Sheng Yang, Johan Lauwaert, Maria Batuk, Joke Hadermann, Xeniya Kozina, Evelyn Handick, Claudia Hartmann, Dominic Gerlach, Asahiko Matsuda, Shigenori Ueda, Toyohiro Chikyow, Roberto Felix, Yufeng Zhang, Regan G. Wilks, Marcus Baer
SUSTAINABLE ENERGY & FUELS
(2019)
Proceedings Paper
Green & Sustainable Science & Technology
Markus Neuwirth, Thierry Kohl, Guy Brammertz, Jessica de Wild, Marc Meuris, Jef Poortmans, Bart Vermang, Heinz Kalt, Michael Hetterich
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
(2018)