Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

出版年份 2015 全文链接

标题

作者

关键词

Atomic layer deposition, In, 0.53, Ga, 0.47, As, High-, k, dielectrics, Interface traps, Plasma, Passivation

出版物

Volume 147, Issue -, Pages 231-234

出版商

Elsevier BV

发表日期

2015-04-25

DOI

10.1016/j.mee.2015.04.102

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