Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks

(2016) Kechao Tang et al.   ACS Applied Materials & Interfaces

Border trap reduction in Al2O3/InGaAs gate stacks

(2015) Kechao Tang et al.   APPLIED PHYSICS LETTERS

Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks

(2015) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate

(2014) Yueh-Chin Lin et al.   Applied Physics Express

Degradation characteristics of metal/Al2O3/n-InGaAs capacitors

(2014) F. Palumbo et al.   JOURNAL OF APPLIED PHYSICS

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2

(2013)   APPLIED PHYSICS LETTERS

Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces

(2013) Jaesoo Ahn et al.   APPLIED PHYSICS LETTERS

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

(2013) Ming-Fu Li et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Gate Stack Reliability of MOSFETs With High-Mobility Channel Materials: Bias Temperature Instability

(2013) Xiao Gong et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

(2013) Jun Lin et al.   JOURNAL OF APPLIED PHYSICS

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

(2013) Varistha Chobpattana et al.   JOURNAL OF APPLIED PHYSICS

Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

(2013) Gang He et al.   SURFACE SCIENCE REPORTS

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

(2013) Gang He et al.   APL Materials

Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

(2012)   APPLIED PHYSICS LETTERS

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

(2012) R. Suzuki et al.   APPLIED PHYSICS LETTERS

High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

(2012) Qiang Li et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

(2012) Guangfan Jiao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion

(2012) Han-Ping Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

(2012) Yu Yuan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

(2011) Gang He et al.   PROGRESS IN MATERIALS SCIENCE

Quantification of trap densities at dielectric/III–V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

(2010) H. D. Trinh et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS