标题
Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects
作者
关键词
-
出版物
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume 13, Issue 4, Pages 444-455
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-08-09
DOI
10.1109/tdmr.2013.2275917
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Statistical Characterization and Modeling of the Temporal Evolutions of $\Delta V_{\rm t}$ Distribution in NBTI Recovery in Nanometer MOSFETs
- (2013) Jung-Piao Chiu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Analysis of Charge-Pumping Data for Identification of Dielectric Defects
- (2013) Dmitry Veksler et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Examination of the application of multiphonon models to the random telegraph signal noise in metal-oxide-semiconductor structures
- (2013) Manhong Zhang et al. JOURNAL OF APPLIED PHYSICS
- Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
- (2012) B. Benbakhti et al. IEEE ELECTRON DEVICE LETTERS
- AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact
- (2012) Xiao Sun et al. IEEE ELECTRON DEVICE LETTERS
- Oxide Trapping in the InGaAs–$\hbox{Al}_{2} \hbox{O}_{3}$ System and the Role of Sulfur in Reducing the $ \hbox{Al}_{2}\hbox{O}_{3}$ Trap Density
- (2012) Alireza Alian et al. IEEE ELECTRON DEVICE LETTERS
- Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress
- (2012) Guangfan Jiao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects
- (2012) Davide Garetto et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices
- (2012) Yu Yuan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs
- (2012) Sofia Johansson et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Probing bulk defect energy bands using generalized charge pumping method
- (2012) Muhammad Masuduzzaman et al. JOURNAL OF APPLIED PHYSICS
- Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors
- (2012) Xiao Sun et al. JOURNAL OF APPLIED PHYSICS
- An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation
- (2012) Dong Wang et al. JOURNAL OF APPLIED PHYSICS
- Challenges and opportunities in advanced Ge pMOSFETs
- (2012) E. Simoen et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Submonolayer barium passivation study for germanium(100)/molecular beam epitaxial Al2O3
- (2011) X. Sun et al. APPLIED PHYSICS LETTERS
- Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer
- (2011) C. Merckling et al. APPLIED PHYSICS LETTERS
- A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices
- (2011) Yu Yuan et al. IEEE ELECTRON DEVICE LETTERS
- Effects of Positive and Negative Stresses on III–V MOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
- (2011) N. Wrachien et al. IEEE ELECTRON DEVICE LETTERS
- Low-Frequency Noise Characterization of Strained Germanium pMOSFETs
- (2011) E. Simoen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Characterization of Border Trap Density With the Multifrequency Charge Pumping Technique in Dual-Layer Gate Oxide
- (2011) Younghwan Son et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors
- (2011) Guy Brammertz et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics
- (2011) Duygu Kuzum et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
- (2011) Tibor Grasser et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors
- (2011) Juan A. Jiménez Tejada et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs
- (2011) Cher Xuan Zhang et al. IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2Gate Dielectric
- (2011) Jerome Mitard et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide
- (2011) C. Merckling et al. JOURNAL OF APPLIED PHYSICS
- Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
- (2011) J. R. Weber et al. JOURNAL OF APPLIED PHYSICS
- Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
- (2011) Tibor Grasser MICROELECTRONICS RELIABILITY
- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
- (2010) Eun Ji Kim et al. APPLIED PHYSICS LETTERS
- High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms
- (2010) Duygu Kuzum et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
- (2010) Tibor Grasser et al. PHYSICAL REVIEW B
- A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique
- (2010) Moonju Cho et al. SOLID-STATE ELECTRONICS
- Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge
- (2009) A. P. D. Nguyen et al. APPLIED PHYSICS LETTERS
- Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
- (2009) C. L. Hinkle et al. APPLIED PHYSICS LETTERS
- On the interface state density at In0.53Ga0.47As/oxide interfaces
- (2009) G. Brammertz et al. APPLIED PHYSICS LETTERS
- A New Physical $\hbox{1}/f$ Noise Model for Double-Stack High-$k$ Gate-Dielectric MOSFETs
- (2009) Seung Hyun Song et al. IEEE ELECTRON DEVICE LETTERS
- $1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks
- (2009) P. Magnone et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs
- (2009) Debabrata Maji et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures
- (2009) F. Crupi et al. JOURNAL OF APPLIED PHYSICS
- Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation
- (2009) Eun Ji Kim et al. JOURNAL OF APPLIED PHYSICS
- Investigation of 1/f noise in germanium-on-insulator 0.12μm PMOS transistors from weak to strong inversion
- (2009) J. Gyani et al. SOLID-STATE ELECTRONICS
- Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs
- (2009) E. Simoen et al. THIN SOLID FILMS
- On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack
- (2008) Debabrata Maji et al. APPLIED PHYSICS LETTERS
- In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm
- (2008) S. Koveshnikov et al. APPLIED PHYSICS LETTERS
- Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters
- (2008) Y. C. Chang et al. APPLIED PHYSICS LETTERS
- Exploring the Capability of Multifrequency Charge Pumping in Resolving Location and Energy Levels of Traps Within Dielectric
- (2008) Muhammad Masuduzzaman et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Paramagnetic point defects at interfacial layers in biaxial tensile strained (100)Si/SiO2
- (2008) P. Somers et al. JOURNAL OF APPLIED PHYSICS
- Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics
- (2007) Tanvir Hasan Morshed et al. SOLID-STATE ELECTRONICS
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