期刊
APPLIED PHYSICS LETTERS
卷 100, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4724330
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资金
- ONR Define MURI [N00014-10-1-0937]
- Semiconductor Research Corporation through the Nonclassical CMOS Research Center [1437.008]
- NSF [ECCS-1125017]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1125017] Funding Source: National Science Foundation
A recombination-controlled tunneling model is used to explain the strong frequency dispersion seen in the accumulation capacitance and conductance of dielectric/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors. In this model, the parallel conductance is large when, at positive gate biases, the metal Fermi level lines up with a large density of interface states in the In0.53Ga0.47As band gap. It is shown that the model explains in a semi-quantitative manner the experimentally observed capacitor characteristics, including a peak in parallel conductance/frequency (G(p)/omega) versus log frequency curves at positive gate bias and the dependence of the frequency dispersion on the dielectric thickness. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724330]
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