期刊
APPLIED PHYSICS LETTERS
卷 103, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4818330
关键词
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资金
- Semiconductor Research Corporation through the Non-Classical CMOS Research Center [1437.008]
- Stanford Initiative in Nanoscale Materials and Processes (INMP)
- US-Israel Binational Science Foundation
The interrelated effects of initial surface preparation and precursor predosing on defect passivation of atomic layer deposited (ALD) Al2O3/InGaAs(100) interfaces are investigated. Interface trap distributions are characterized by capacitance-voltage and conductance-voltage analysis of metal-oxide-semiconductor capacitors. Thermal desorption conditions for a protective As-2 layer on the InGaAs surface and dosing conditions of trimethylaluminum prior to ALD-Al2O3 are varied to alter the interface trap densities. Experimental results are consistent with the predictions of ab initio electronic structure calculations showing that trimethylaluminum dosing of the As-rich In0.53Ga0.47As(100) surface suppresses interface traps by passivating As dangling bonds prior to the initiation of Al2O3 deposition. (C) 2013 AIP Publishing LLC.
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