Article
Multidisciplinary Sciences
Hyunseok Kim, Haneui Bae, Ting-Yuan Chang, Diana L. Huffaker
Summary: The design of III-V nanowires on silicon substrates, self-assembled with gold plasmonic nanostructures, serves as a key building block for efficient and functional photodetectors on silicon. Numerical calculations reveal that the proposed meta-absorber exhibits high sensitivity to polarization, incident angle, wavelength of input light, and surrounding environment. This design can be utilized for efficient infrared photodetectors on silicon and various sensing applications with high sensitivity and functionality.
SCIENTIFIC REPORTS
(2021)
Review
Chemistry, Multidisciplinary
Markus Scherrer, Noelia Vico Trivino, Svenja Mauthe, Preksha Tiwari, Heinz Schmid, Kirsten E. Moselund
Summary: The article reviews various methods for monolithic III-V integration, with a focus on the results achieved using the TASE technique. This method enables self-aligned in-plane monolithic integration of III-V materials on silicon by selectively replacing pre-patterned silicon structures. The study discusses the realization of in-plane integrated photonic structures, particularly focusing on light emitters and high-speed detectors covering the telecom wavelength spectral range, which may lead to fully integrated, densely packed, and scalable photonic integrated circuits.
APPLIED SCIENCES-BASEL
(2021)
Article
Engineering, Electrical & Electronic
Shinji Matsuo, Takuma Aihara, Tatsurou Hiraki, Yoshiho Maeda, Toshiki Kishi, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka
Summary: Silicon photonics is a crucial technology for large-scale photonic integrated circuits due to its capability of high uniformity and quality wafer processes. This paper focuses on the heterogeneous integration of membrane III-V compound semiconductor photonic devices, which offer optical gain and high modulation efficiency. The use of a simple taper waveguide structure enables efficient optical coupling with a Si waveguide. Furthermore, the micro-transfer-printing technology allows for device selection and integration on Si substrates, facilitating the development of transmission modules with low power consumption.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2023)
Review
Engineering, Electrical & Electronic
Chao Zhao, Zhaonan Li, Tianyi Tang, Jiaqian Sun, Wenkang Zhan, Bo Xu, Huajun Sun, Hui Jiang, Kong Liu, Shengchun Qu, Zhijie Wang, Zhanguo Wang
Summary: This passage discusses the increasing demand for fabricating III-V semiconductor materials on unconventional substrates, highlighting the potential advantages of defect-free epitaxial growth through two-dimensional materials. The unique optical properties of the epitaxy correlating with their growth conditions are explored, along with their applications in optics and nanophotonics. Challenges and remaining obstacles in fully exploiting the potential for practical applications are also addressed.
PROGRESS IN QUANTUM ELECTRONICS
(2021)
Article
Physics, Applied
Zequan Chen, Abhishek Mishra, Aditya K. Bhat, Matthew D. Smith, Michael J. Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball
Summary: The frequency dispersion of impedance in lateral beta-Ga2O3 MOSFETs has been studied and a model has been developed to explain the phenomenon. The dispersion is caused by the resistive and capacitive coupling between the terminal contact pads and the buried conducting layer at the unintentionally-doped epitaxy/substrate interface, which also leads to a buried parallel leakage path. It is shown that the dispersion is not related to gate dielectric traps, as commonly assumed. A generalized equivalent circuit model is proposed to explain the experimental results.
APPLIED PHYSICS EXPRESS
(2023)
Article
Engineering, Electrical & Electronic
Liron Shvilberg, Takanori Mimura, Haotian Xue, Jonathan J. Wierer Jr, Elizabeth A. Paisley, Helge Heinrich, Jon F. Ihlefeld
Summary: A robust dielectric insulating layer for wide bandgap semiconductor devices is a challenge, and magnesium oxide shows promise as a suitable material for integration with gallium nitride (GaN). However, large area growth and smooth growth surfaces remain obstacles. This study presents the results of epitaxial growth of magnesium oxide on n-type GaN, showing low leakage currents and low interface state densities, indicating that the interfacial phase is not detrimental to the interfacial electronic properties of MOSCap devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
R. R. Cesar, M. Mederos, R. C. Teixeira, J. A. Diniz
Summary: Electrolyte-insulator-semiconductor (EIS) devices were fabricated using various materials as integrated reference electrodes. Capacitance versus voltage (C-V) measurements were used to determine the sensitivity of the devices to different pH solutions. The analysis showed that EIS capacitors with integrated Pt and Au reference electrodes exhibited two well-defined sensitivity regions, while those with TiN as an integrated reference electrode did not show such behavior.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Clarissa Convertino, Cezar B. Zota, Heinz Schmid, Daniele Caimi, Lukas Czornomaz, Adrian M. Ionescu, Kirsten E. Moselund
Summary: The study presents a III-V hybrid TFET-MOSFET technology on silicon, achieving low-power and high-performance applications by optimizing InGaAs/GaAsSb TFETs and InGaAs MOSFETs simultaneously.
NATURE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Stefan Andric, Fredrik Lindelow, Lars Ohlsson Fhager, Erik Lind, Lars-Erik Wernersson
Summary: The study investigates the circuit performance of lateral III-V nanowire MOSFETs, obtaining key parameters and demonstrating their potential applications through experiments.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
(2022)
Article
Materials Science, Multidisciplinary
Xingliang Li, He Wang, Wudi Zhang, Renjie Li, Ningyu Ren, Sanlong Wang, Yuxiang Li, Qiaojiao Zou, Wei Han, Qixing Zhang, Guofu Hou, Qian Huang, Shengzhi Xu, Chaohua Zhang, Qiang Sun, Ying Zhao, Xiaodan Zhang
Summary: The use of a transparent conductive adhesive (TCA) successfully enables bonding in III-V/silicon tandem solar cells, providing a new solution to the challenge of vacuum bonding in industrialized micron-sized pyramid silicon cells. The TCA exhibits low contact resistance, high transmittance, and good stability, showing great potential in enhancing the performance of solar cells.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Multidisciplinary
Benjamin A. Reeves, Myles A. Steiner, Thomas E. Carver, Ze Zhang, Aaron M. Lindenberg, Bruce M. Clemens
Summary: We successfully separated single-crystalline multilayer III-V solar cells from GaAs substrates using an unfocused Nd:YAG laser pulse. The resulting device has a power conversion efficiency of 17.4% and an open-circuit voltage of 1.07 V, comparable to cells produced via conventional processes.
CELL REPORTS PHYSICAL SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
[Anonymous]
Summary: Authors are requested to submit unpublished manuscripts for inclusion in an upcoming event.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Review
Chemistry, Physical
Yufei Yang, Yi Peng, Muhammad Farooq Saleem, Ziqian Chen, Wenhong Sun
Summary: The successful separation of graphene has led to increased research focus on two-dimensional layered materials, such as h-BN. However, the poor adhesion and high preparation temperature make it challenging to produce large-area and dense h-BN films.
Article
Engineering, Electrical & Electronic
Navdeep Singh Gandhi, Rajdeep Dhar, Fiheon Imroze, Mithun Chennamkulam Ajith, Prashanth Kumar Manda, Soumya Dutta
Summary: The study investigates the source of charge carriers within pristine organic semiconductors using OMISCAP devices and demonstrates the impact of metal-semiconductor junctions on the C-V characteristics of MISCAP devices. The findings suggest that contact-induced charge injection from the metal to the semiconductor is the predominant source of charge carriers in a pristine organic semiconductor rather than inadvertent doping.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Physics, Applied
Mithun Bhowmick, Haowen Xi, Bruno Ullrich
Summary: This article introduces a model that accurately fits the absorption saturation parameter linked to the effective electron density of states, allowing for the comparison of experimentally found absorption limits and their variations in compound semiconductors with theoretical expectations. This is crucial for certain optoelectronic device applications.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Christopher M. Smyth, Guanyu Zhou, Adam T. Barton, Robert M. Wallace, Christopher L. Hinkle
Summary: Pd electrodes have shown superior performance in Te-based devices, with native TeOx impacting contact polarity and resistance, and atomic hydrogen treatment affecting band alignment and electrostatics between Pd and Te. The presence or absence of TeOx also influences the formation of PdTex intermetallic, ultimately affecting the work function.
ADVANCED MATERIALS INTERFACES
(2021)
Review
Physics, Applied
P. Laukkanen, M. P. J. Punkkinen, M. Kuzmin, K. Kokko, J. Lang, R. M. Wallace
Summary: Control of interfacial physicochemical properties related to device materials to reduce the impact of point defects on device performance is a key focus in the semiconductor industry. While control of defect density for silicon has been established through deliberate reactions with congruent species, such as hydrogen, the control of interfacial defects for III-V device materials remains an active area of research. III-V devices have demanding performance criteria, and surface reactions of III-V crystals, including oxidation, can limit device performance, resulting in significant degradation.
APPLIED PHYSICS REVIEWS
(2021)
Article
Nanoscience & Nanotechnology
Xinglu Wang, Seong Yeoul Kim, Robert M. Wallace
Summary: The high contact resistance of transition-metal dichalcogenide (TMD)-based devices is a limiting factor for their application. The study on the interface chemistry and band alignment of metal/MoS2 shows that Ni forms a covalent contact while Ag forms van der Waals gaps, with potential for Ag to form an Ohmic contact on MoS2 bulk.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Applied
Ti Xie, Qin Wang, Robert M. Wallace, Cheng Gong
Summary: Graphene sensors show promise in gas detection due to their excellent electrical properties and large surface-to-volume ratio. The response of graphene sensors to NO2 gas depends on the initial doping level, highlighting the importance of graphene conditions in sensor performance.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Ze Feng, Xiaoye Qin, Xiao Chen, Zhiyun Li, Rong Huang, Yang Shen, Ding Ding, Yitong Wang, Meiyi Jing, Yi Cui, An Dingsun, Hui Liu, Hong Dong, Robert M. Wallace
Summary: This study investigates the diffusion of interface oxygen and indium atoms in an InP/Al2O3 stack using O-18 isotope tracing, shedding light on the fundamental mechanism for III-V semiconductors' interface elemental diffusion and the interface passivation strategy.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Elizabeth J. Legge, Muhammad M. Ali, Hina Y. Abbasi, Benjamen P. Reed, Barry Brennan, Lidija Matjacic, Zari Tehrani, Vlad Stolojan, S. Ravi P. Silva, Owen J. Guy, Andrew J. Pollard
Summary: Graphene is an ideal material for biosensors due to its large surface area, high electrical conductivity, and high tensile strength. Achieving selectivity through functionalization while maintaining device performance and sensitivity is crucial for successful biosensing applications. By comparing different functionalization methods, this study demonstrates the unexpected removal of covalently bonded functional groups during the modification of graphene, indicating the possibility of reverting to the non-functionalized graphene structure.
JOURNAL OF CHEMICAL PHYSICS
(2021)
Review
Materials Science, Multidisciplinary
Daniel Gall, Judy J. Cha, Zhihong Chen, Hyeuk-Jin Han, Christopher Hinkle, Joshua A. Robinson, Ravishankar Sundararaman, Riccardo Torsi
Summary: As interconnect wires shrink in size, their electrical resistance increases, leading to signal delay and higher energy consumption. Research into new materials systems and processing methods is needed to address this size effect and produce narrow high-conductivity lines.
Article
Engineering, Electrical & Electronic
E. Coleman, G. Mirabelli, P. Bolshakov, P. Zhao, E. Caruso, F. Gity, S. Monaghan, K. Cherkaoui, V Balestra, R. M. Wallace, C. D. Young, R. Duffy, P. K. Hurley
Summary: This study investigates inverted metal-oxide semiconductor (MOS) structures formed by mechanically exfoliating MoS2 flakes onto Al2O3 or SiO2 layers on degenerately doped p-type silicon substrates. Multi-frequency capacitance and conductance characterization is performed to study electrically active defects in the MoS2/oxide structures, paired with physics-based ac simulations indicating close to ideal interfacial properties.
SOLID-STATE ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Sofia Marchesini, Benjamen P. Reed, Helen Jones, Lidija Matjacic, Timothy E. Rosser, Yundong Zhou, Barry Brennan, Mariavitalia Tiddia, Rhodri Jervis, Melanie. J. Loveridge, Rinaldo Raccichini, Juyeon Park, Andrew J. Wain, Gareth Hinds, Ian S. Gilmore, Alexander G. Shard, Andrew J. Pollard
Summary: Understanding and mitigating the degradation mechanisms in lithium-ion batteries is crucial for improving their performance and lifespan. Surface analysis techniques are commonly employed to study the changes in chemistry and structure at reactive interfaces, but the complexity of battery electrodes and lack of standard measurement protocols can result in unreliable data. This paper discusses the measurement challenges of several key surface analysis techniques and provides recommendations to improve reproducibility and reduce uncertainty in the analysis of lithium-ion battery electrodes.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Xinglu Wang, Yaoqiao Hu, Seong Yeoul Kim, Rafik Addou, Kyeongjae Cho, Robert M. Wallace
Summary: This study investigates the origins of Fermi level (E-F) pinning for Ni and Ag contacts on W-TMDs by considering interface chemistry, band alignment, impurities, and imperfections of W-TMDs, contact metal adsorption mechanism, and the resultant electronic structure. The origins of E-F pinning at a covalent contact metal/W-TMD interface are defects, impurities, and interface reaction products, while for a van der Waals contact metal/TMD system, the primary factor responsible for E-F pinning is the electronic modification of the TMDs resulting from defects and impurities.
Article
Nanoscience & Nanotechnology
Sofia Marchesini, Benjamen P. Reed, Helen Jones, Lidija Matjacic, Timothy E. Rosser, Yundong Zhou, Barry Brennan, Mariavitalia Tiddia, Rhodri Jervis, Melanie. J. Loveridge, Rinaldo Raccichini, Juyeon Park, Andrew J. Wain, Gareth Hinds, Ian S. Gilmore, Alexander G. Shard, Andrew J. Pollard
Summary: This article discusses the measurement challenges that affect surface analysis techniques used for Li-ion battery degradation studies and provides recommendations for improving reproducibility and reducing uncertainty. The article highlights key measurement issues that need to be addressed.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Proceedings Paper
Engineering, Manufacturing
Guanyu Zhou, Tian Sun, Rehan Younas, Christopher L. Hinkle
Summary: Monolithic 3D heterogeneous integration is the most cost-effective approach for achieving continued scalability in power and performance in integrated circuit technologies. The paper discusses various methods and materials to overcome constraints imposed by placing active devices in upper levels, focusing on better materials and utilizing unique physics to surpass current limitations in 3D integrated device performance.
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021)
(2021)
Article
Chemistry, Multidisciplinary
Anne E. D'Achille, Robert M. Wallace, Jeffery L. Coffer
Summary: Europium-doped CeO2 nanomaterials have been studied for various applications due to enhanced catalytic activity and visible fluorescence. Different morphologies show varying Eu3+ fluorescence, with nanocubes exhibiting the strongest emission. Oxygen defects and hydroxyl groups in the structures can quench the fluorescence, while larger crystalline domains lead to stronger emission intensities.
NANOSCALE ADVANCES
(2021)
Article
Chemistry, Multidisciplinary
Sofia Marchesini, Keith R. Paton, Barry Brennan, Piers Turner, Andrew J. Pollard
Summary: Nanomaterials have a high surface-area-to-mass ratio, making surface properties crucial for product performance optimization. Characterizing nanoscale surfaces is challenging, especially in liquid dispersions, but nuclear magnetic resonance proton relaxation can quickly characterize the surface chemistry of graphitic materials.
