Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2

An extensive study of the influence of dopants on the ferroelectric properties of HfO2

(2017) S. Starschich et al.   Journal of Materials Chemistry C

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

(2016) Min Hyuk Park et al.   ACS Applied Materials & Interfaces

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

(2016) Takao Shimizu et al.   Scientific Reports

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices

(2015) S. Brivio et al.   APPLIED PHYSICS LETTERS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Detection of the insulating gap and conductive filament growth direction in resistive memories

(2015) E. Yalon et al.   Nanoscale

Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices

(2015) Sergej Starschich et al.   ECS Journal of Solid State Science and Technology

Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

(2015) J. Muller et al.   ECS Journal of Solid State Science and Technology

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

(2015) M. H. Park et al.   Journal of Materials Chemistry C

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

(2014) S. Starschich et al.   APPLIED PHYSICS LETTERS

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

(2014) Malgorzata Sowinska et al.   JOURNAL OF APPLIED PHYSICS

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

(2014) L. Zhao et al.   Nanoscale

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes

(2014) Min Hyuk Park et al.   Physica Status Solidi-Rapid Research Letters

Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

(2014) Min Hyuk Park et al.   Advanced Energy Materials

About the deformation of ferroelectric hystereses

(2014) T. Schenk et al.   Applied Physics Reviews

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

(2013) U. Schroeder et al.   ECS Journal of Solid State Science and Technology

Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

(2012) T. Olsen et al.   APPLIED PHYSICS LETTERS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectricity in Gd-Doped HfO2Thin Films

(2012) S. Mueller et al.   ECS Journal of Solid State Science and Technology

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

(2011) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Grain boundary-driven leakage path formation in HfO2 dielectrics

(2011) G. Bersuker et al.   SOLID-STATE ELECTRONICS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Characterization of Bi and Fe co-doped PZT capacitors for FeRAM

(2010) Jeffrey S Cross et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology