Resistance switching in HfO2 metal-insulator-metal devices

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The physical origin of random telegraph noise after dielectric breakdown

(2009) X. Li et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

(2009) Heng Yuan Lee et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Switching dynamics in titanium dioxide memristive devices

(2009) Matthew D. Pickett et al.   JOURNAL OF APPLIED PHYSICS

Vacancy segregation in the initial oxidation stages of the TiN(100) surface

(2009) Janina Zimmermann et al.   JOURNAL OF CHEMICAL PHYSICS

Physicochemical and electrical characterizations of atomic layer deposition grown HfO[sub 2] on TiN and Pt for metal-insulator-metal application

(2009) C. Jorel et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

Crystal nucleation in glasses of phase change memory

(2008) V. G. Karpov et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching effects of HfO2 high-k dielectric

(2008) M.Y. Chan et al.   MICROELECTRONIC ENGINEERING

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS

Electric-field-induced submicrosecond resistive switching

(2008) N. Das et al.   PHYSICAL REVIEW B

Direct and defect-assisted electron tunneling through ultrathinSiO2layers from first principles

(2008) Joongoo Kang et al.   PHYSICAL REVIEW B

Small Au and Pt Clusters at the Anatase TiO2(101) Surface:  Behavior at Terraces, Steps, and Surface Oxygen Vacancies

(2007) Xue-Qing Gong et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications

(2007) Seunghyup Lee et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Translational and localised ionic motion in materials with disordered structures

(2007) Klaus Funke et al.   SOLID STATE SCIENCES